BCR 183 B6327 Infineon Technologies, BCR 183 B6327 Datasheet - Page 6

• Manufacturer Part Number: BCR 183 B6327
• Description: TRANSISTOR PNP DGTL AF SOT-23
• Manufacturer: Infineon Technologies

Specifications of BCR 183 B6327

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BCR183B6327XT; SP000057461

Total power dissipation P
BCR183W
Permissible Pulse Load R
BCR183
K/W
mW
10
10
10
10
10
300
250
225
200
175
150
125
100
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
tot
thJS
10
= (T
-2
=
S
(t
s
)
T
t
p
p
S
)
150
10
0
6
Permissible Pulse Load
P
BCR183
totmax
10
10
10
10
-
3
2
1
0
10
/P
-6
totDC
10
-5
=
10
(t
p
-4
)
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
BCR183...
-2
2007-07-31
s
t
p
10
0