MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 10

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
C
5
/I
B
V
= 10
R
10
Figure 34. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 32. V
15
, COLLECTOR CURRENT (mA)
−25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G
20
20
25
0.1
CE(sat)
10
1
25°C
0
Figure 36. Input Voltage versus Output Current
30
30
versus I
T
35
A
75°C
= −25°C
f = 1 MHz
I
T
10
E
I
A
C
40
75°C
= 0 V
, COLLECTOR CURRENT (mA)
= 25°C
C
40
http://onsemi.com
45
25°C
20
50
50
10
0.001
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 35. Output Current versus Input Voltage
75°C
V
O
1
= 0.2 V
40
T
A
2
= −25°C
Figure 33. DC Current Gain
I
V
C
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
T
75°C
50
A
= −25°C
4
5
10
25°C
6
7
V
O
V
= 5 V
8
CE
= 10 V
9
100
10