MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 8

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

0.001
4.5
3.5
2.5
1.5
0.5
0.01
0.1
4
3
2
1
0
0
1
0
I
5
C
/I
B
V
R
= 10
10
Figure 24. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 22. V
, COLLECTOR CURRENT (mA)
15
−25°C
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G
20
20
25
0.1
CE(sat)
25°C
10
1
0
Figure 26. Input Voltage versus Output Current
30
T
30
A
75°C
versus I
= −25°C
75°C
35
10
f = 1 MHz
I
T
I
E
C
A
40
25°C
, COLLECTOR CURRENT (mA)
C
= 0 V
= 25°C
40
http://onsemi.com
45
20
50
50
8
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 25. Output Current versus Input Voltage
75°C
V
T
1
O
A
T
A
= 0.2 V
40
= −25°C
= −25°C
2
Figure 23. DC Current Gain
I
V
C
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
25°C
50
4
5
10
75°C
25°C
6
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10