DTC114EM3T5G ON Semiconductor, DTC114EM3T5G Datasheet

TRANS NPN 50V 10/10K SOT-723

DTC114EM3T5G

Manufacturer Part Number
DTC114EM3T5G
Description
TRANS NPN 50V 10/10K SOT-723
Manufacturer
ON Semiconductor
Datasheets

Specifications of DTC114EM3T5G

Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Current - Collector Cutoff (max)
500nA
Power - Max
260mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Package
3SOT-723
Configuration
Single
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTC114EM3T5G
DTC114EM3T5GOSTR

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Manufacturer:
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DTA114EM3T5G Series
Digital Transistors (BRT)
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
device and its external resistor bias network. The digital transistor
contains a single transistor with a monolithic bias network consisting
of two resistors; a series base resistor and a base−emitter resistor. The
digital transistor eliminates these individual components by
integrating them into a single device. The use of a digital transistor can
reduce both system cost and board space. The device is housed in the
SOT−723 package which is designed for low power surface mount
applications.
MAXIMUM RATINGS
February, 2004 − Rev. 0
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
This new series of digital transistors is designed to replace a single
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT−723 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb−Free Devices
Semiconductor Components Industries, LLC, 2004
Rating
(T
A
= 25 C unless otherwise noted)
Preferred Devices
Symbol
V
V
CBO
CEO
I
C
Value
100
50
50
1
mAdc
Unit
Vdc
Vdc
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(INPUT)
BASE
PIN 1
3
ORDERING INFORMATION
1
xx
M
TRANSISTORS
http://onsemi.com
PNP SILICON
2
R1
R2
= Specific Device Code
(See Marking Table on page 2)
= Date Code
DIGITAL
CASE 631AA
SOT−723
Style 1
Publication Order Number:
(GROUND)
EMITTER
COLLECTOR
PIN 2
(OUTPUT)
PIN 3
DTA114EM3/D
MARKING
DIAGRAM
XX M

Related parts for DTC114EM3T5G

DTC114EM3T5G Summary of contents

Page 1

DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains ...

Page 2

ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device Marking DTA114EM3T5G 6A DTA124EM3T5G* 6B DTA144EM3T5G 6C DTA114YM3T5G 6D DTA114TM3T5G 6E DTA143TM3T5G* 6F DTA123EM3T5G* 6H DTA143EM3T5G* 6J DTA143ZM3T5G* 6K DTA124XM3T5G 6L DTA123JM3T5G* 6M DTA115EM3T5G 6N DTA144WM3T5G* 6P *Available upon request †For information ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current ( Collector−Emitter Cutoff Current ( Emitter−Base Cutoff Current ( mA, I Collector−Base ...

Page 4

ELECTRICAL CHARACTERISTICS Characteristic Input Resistor Resistor Ratio DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G / DTA115EM3T5G DTA114YM3T5G DTA114TM3T5G/DTA143TM3T5G DTA123EM3T5G/DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144WM3T5G 300 250 200 150 100 50 0 −50 DTA114EM3T5G Series ( unless otherwise noted) (Continued) A Symbol DTA114EM3T5G R1 DTA124EM3T5G ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G − COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EM3T5G − 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G − 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G 0 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G 1 0.1 − COLLECTOR CURRENT (mA) C Figure 23. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WM3T5G − COLLECTOR CURRENT (mA) C Figure 28. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 ...

Page 11

... SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 0.40 0.0157 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−723 CASE 631AA−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 12

... Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com DTA114EM3T5G Series N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 ON Semiconductor Website: http://onsemi ...

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