DTC114EM3T5G ON Semiconductor, DTC114EM3T5G Datasheet - Page 9

• Manufacturer Part Number: DTC114EM3T5G
• Description: TRANS NPN 50V 10/10K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTC114EM3T5G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Package: 3SOT-723
• Configuration: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114EM3T5G; DTC114EM3T5GOSTR

1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0
1
0
Figure 23. Maximum Collector Voltage versus
10
V
1
R
Figure 25. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
2
20
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G
Collector Current
3
30
100
10
1
0
Figure 27. Input Voltage versus Output Current
4
−25 C
25 C
40
75 C
2
f = 1 MHz
I
T
5
E
A
4
DTA114EM3T5G Series
I
C
25 C
= 0 V
= 25 C
, COLLECTOR CURRENT (mA)
50
I
C
/I
6
B
http://onsemi.com
6
= 10
75 C
T
A
8
= −25 C
60
7
10
9
1000
100
12
100
0.1
10
10
1
1
0
1
Figure 26. Output Current versus Input Voltage
V
14
O
= 0.2 V
1
16
2
Figure 24. DC Current Gain
I
C
V
18
, COLLECTOR CURRENT (mA)
in
T
, INPUT VOLTAGE (VOLTS)
3
A
75 C
= −25 C
20
25 C
4
5
10
25 C
6
T
V
A
7
O
V
75 C
= −25 C
CE
= 5 V
= 10 V
8
9
100
10