DTA144TT1 ON Semiconductor, DTA144TT1 Datasheet - Page 2

• Manufacturer Part Number: DTA144TT1
• Description: TRANS PNP BIAS RES 50V SC-59
• Manufacturer: ON Semiconductor

Specifications of DTA144TT1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 230mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: DTA144TT1OS

1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector–Base Cutoff Current
Collector–Emitter Cutoff Current
Emitter–Base Cutoff Current
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
Input Resistor
(V
(V
(V
(I
(I
(V
(I
(V
(V
C
C
C
CB
CE
EB
CE
CC
CC
= 10 A, I
= 2.0 mA, I
= 10 mA, I
= 6.0 V, I
= 50 V, I
= 50 V, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
E
E
B
C
B
C
B
= 0)
B
B
= 0)
= 0)
= 5.0 mA)
= 1.0 mA)
= 0)
= 0)
= 3.5 V, R
= 0.25 V, R
Characteristic
(Note 1)
L
L
= 1.0 k )
= 1.0 k )
350
300
250
200
150
100
50
0
–50
(T
A
= 25 C unless otherwise noted)
R
T
A
JA
, AMBIENT TEMPERATURE (5 C)
0
Figure 1. Derating Curve
= 370 C/W
http://onsemi.com
DTA144TT1
50
2
V
V
Symbol
V
(BR)CBO
(BR)CEO
CE(sat)
I
I
I
V
V
CBO
CEO
h
EBO
R1
FE
OL
OH
100
32.9
Min
160
4.9
50
50
–
–
–
–
–
150
Typ
350
47
–
–
–
–
–
–
–
–
Max
0.25
61.1
100
500
0.2
0.2
–
–
–
–
mAdc
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
k