BT134W-600,135 NXP Semiconductors, BT134W-600,135 Datasheet - Page 6

TRIAC 600V 1A 35MA SOT223

BT134W-600,135

Manufacturer Part Number
BT134W-600,135
Description
TRIAC 600V 1A 35MA SOT223
Manufacturer
NXP Semiconductors
Type
TRIACr
Datasheets

Specifications of BT134W-600,135

Package / Case
TO-261-4, TO-261AA
Triac Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
10A, 11A
Current - On State (it (rms)) (max)
1A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
1A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
11 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.5 V @ 2 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Hold Current
15mA
Gate Trigger Current (max)
70mA
Gate Trigger Voltage (max)
1.5V
Package Type
SOT-223
Peak Repeat Off Current
500uA
Peak Surge On-state Current (max)
11A
On State Voltage(max)
1.5@2AV
Mounting
Surface Mount
Pin Count
3 +Tab
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1774-2
934000960135
BT134W-600 /T3
Philips Semiconductors
MECHANICAL DATA
Notes
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
2. Epoxy meets UL94 V0 at 1/8".
August 1997
Triacs
sensitive gate
Dimensions in mm
Net Mass: 0.11 g
Order code: 9397 750 00505.
max
16
max
1.8
0.10
0.02
max
0.32
0.24
10
Fig.15. SOT223 surface mounting package.
13
1.05
0.85
6
1
2.3
6.7
6.3
3.1
2.9
4.6
0.80
0.60
2
4
3
A
B
0.1
(4x)
3.7
3.3
BT134W series E
M
Product specification
B
7.3
6.7
0.2
Rev 1.200
M
A

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