BT137-600E,127 NXP Semiconductors, BT137-600E,127 Datasheet - Page 4
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BT137-600E,127
Manufacturer Part Number
BT137-600E,127
Description
TRIAC 600V 8A TO220AB
Manufacturer
NXP Semiconductors
Specifications of BT137-600E,127
Package / Case
TO-220AB-3
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
20mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
65A, 71A
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
8A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
71 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.65 V @ 10 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3658-5
933522890127
BT137-600E
933522890127
BT137-600E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT137-600E,127
Manufacturer:
NXP Semiconductors
Quantity:
5 850
Philips Semiconductors
June 2001
Triacs
sensitive gate
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G+
T2+ G-
T2- G-
T2- G+
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
25
20
15
10
100
0.01
5
0
10
0.1
10
1
0
10us
IT / A
1
0
Rs = 0.0378 Ohms
dVD/dt (V/us)
Vo = 1.264 V
Tj = 125 C
dV
Zth j-mb (K/W)
Tj = 25 C
D
/dt versus junction temperature T
0.5
0.1ms
pulse width t
1ms
1
50
unidirectional
tp / s
VT / V
10ms
Tj / C
typ
1.5
P
D
bidirectional
BT137 series E
p
0.1s
.
100
Product specification
2
t p
max
1s
th j-mb
2.5
t
Rev 1.400
, versus
j
.
10s
150
3