ACS110-7SB2 STMicroelectronics, ACS110-7SB2 Datasheet - Page 6

• Manufacturer Part Number: ACS110-7SB2
• Description: IC SWITCH LINE AC PWR ASD 8DIP
• Manufacturer: STMicroelectronics
• Series: ASD™r

Specifications of ACS110-7SB2

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 45mA
• Voltage - Off State: 700V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 11A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: 8-DIP
• Current - On State (it (rms) (max): 1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4149-5

Fig. 2-2: RMS on-state current versus ambient
temperature.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
ACS110-7SN/SB2
Fig. 1: Maximum power dissipation versus RMS
on-state current.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6/10
OTHER FIGURES
Maximum power dissipation vs RMS on state current.
RMS on-state current vs ambient temperature, case temperature and package
Relative variation of thermal impedance junction to ambient vs pulse duration and package
Relative variation of gate trigger current vs junction temperature
Relative variation of holding and latching current vs junction
Relative variation of dV/dt vs Tj
Relative variation of (dV/dt)
Surge peak on-state current vs number of cycles
Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t.
On-state characteristics (maximal values)
Thermal resistance junction to ambient vs copper surface under tab
Relative variation of critical (di/dt)c vs junction temperature
0.0
0
I
P(W)
T(RMS)
=180°
0.1
(A)
0.2
25
0.3
0.4
50
T
I
T(RMS)
amb
0.5
(°C)
c
(A)
vs (di/dt)
75
0.6
0.7
Printed circuit board FR4
Natural convection
c
100
0.8
S=5cm²
=180°
0.9
180°
125
1.0
Fig. 2-1: RMS on-state current versus tab or lead
temperature.
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1.E+00
1.E-01
1.E-02
0
I
T(RMS)
1.E-03
K=[Zth
(A)
(j-a)
1.E-02
25
/Rth
(j-a)
]
1.E-01
50
T
tab
/T
1.E+00
t (s)
lead
p
(°C)
75
1.E+01
SOT-223
DIL-8
-
100
1.E+02
=180°
1.E+03
125