BTA26-800BWRG STMicroelectronics, BTA26-800BWRG Datasheet - Page 2

• Manufacturer Part Number: BTA26-800BWRG
• Description: TRIAC 25A 800V INSUL TOP3
• Manufacturer: STMicroelectronics
• Series: Snubberless™r
• Type: TRIACr

Specifications of BTA26-800BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A, 260A
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TOP-3 Insulated
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 75mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TOP Insulated
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 260A
• On State Voltage(max): 1.55@35AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Current, Average Input: 25 A
• Current, Dc Gate-trigger: 35 to 50 mA
• Current, On-state, Rms, Maximum: 25 A
• Current, Surge, Non-repetitive Peak Forward: 260 A
• Dissipation, Gate-power, Average: 1 W
• Resistance, Thermal, Junction To Case: 1.1 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 50 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 75 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4172-5

Characteristics
1
Table 2.
Table 3.
1. minimum I
2. for both polarities of A2 referenced to A1.
2/12
V
(dI/dt)c
Symbol
dV/dt
DSM
Symbol
I
P
I
T(RMS)
GT
V
I
V
I
dI/dt
T
I
H
TSM
G(AV)
I
GM
I
GD
T
GT
stg
(2)
L
²
/V
(1)
t
j
(2)
RSM
(2)
GT
V
V
T
I
I
V
Without snubber
Characteristics
Absolute maximum ratings
Electrical characteristics (T
logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W
T
G
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
²
G
j
D
D
D
is guaranted at 5% of I
t Value for fusing
= 500 mA
= 125° C
= 1.2 I
= 2 x I
= 12 V R
= V
= 67 %V
DRM
GT
GT
Test Conditions
DRM
, t
R
L
L
r
= 33 Ω
≤ 100 ns
= 3.3 kΩ
gate open
j
GT
initial = 25° C)
max.
Parameter
j
= 25° C, unless otherwise specified), Snubberless and
TOP3
D
TO-220AB
RD91 Ins/
TOP3 Ins.
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
p
p
p
2
= 10 ms
= 10 ms
= 20 µs
PAK /
T
T
Quadrant
j
j
I - II - III
I - II - III
I - II - III
= 125° C
= 125° C
I - III
II
BTA24, BTB24, BTA25, BTA26, BTB26, T25
MAX.
MAX.
MAX.
MAX.
MIN.
MIN.
MIN.
T
T
T
T
t = 20 ms
t = 16.7 ms
T
T
T
T
c
c
c
c
j
j
j
j
= 125° C
= 25° C
= 125° C
= 125° C
= 105° C
= 100° C
= 100° C
= 75° C
T2535
T25
500
35
50
70
80
13
- 40 to + 150
- 40 to + 125
CW
500
1.3
0.2
V
35
50
70
80
13
BTA/BTB
DRM
Value
+ 100
250
260
340
25
50
4
1
/V
RRM
1000
BW
100
50
75
80
22
Unit
A/µs
A/ms
A
V/µs
° C
Unit
mA
mA
mA
W
A
A
V
A
V
V
²
s