BTA26-800BWRG STMicroelectronics, BTA26-800BWRG Datasheet - Page 4

• Manufacturer Part Number: BTA26-800BWRG
• Description: TRIAC 25A 800V INSUL TOP3
• Manufacturer: STMicroelectronics
• Series: Snubberless™r
• Type: TRIACr

Specifications of BTA26-800BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 75mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A, 260A
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TOP-3 Insulated
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 75mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TOP Insulated
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 260A
• On State Voltage(max): 1.55@35AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Current, Average Input: 25 A
• Current, Dc Gate-trigger: 35 to 50 mA
• Current, On-state, Rms, Maximum: 25 A
• Current, Surge, Non-repetitive Peak Forward: 260 A
• Dissipation, Gate-power, Average: 1 W
• Resistance, Thermal, Junction To Case: 1.1 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 50 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 75 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4172-5

Characteristics
4/12
Figure 1.
Figure 3.
Figure 5.
30
25
20
15
10
300
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
5
0
1
P(W)
0
0.5
0
I
I
T(RMS)
TM
R = 16 m
V = 0.85V
to
d
(A)
T max.
j
1.0
(A)
Ω
Maximum power dissipation versus
RMS on-state current (full cycle)
D
ambient temperature (printed
circuit board FR4, copper
thickness: 35µm) (full cycle)
On-state characteristics
(maximum values)
25
5
2
PAK RMS on-state current versus
T =
1.5
j
T max.
T = 25°C
j
j
2.0
.
10
50
I
T(RMS)
V
T
amb
TM
2.5
(V)
(A)
(°C)
15
75
3.0
3.5
100
20
(S=1cm )
D PAK
4.0
2
2
125
4.5
25
Figure 2.
Figure 4.
Figure 6.
30
25
20
15
10
1E+0
300
250
200
150
100
1E-2
1E-3
5
0
1E-1
50
0
0
I
T(RMS)
BTA24, BTB24, BTA25, BTA26, BTB26, T25
1E-3
1
I
TSM
K=[Z /R
(A)
(A)
th
Z
th(j-c)
Repetitive
RMS on-state current versus case
temperature (full cycle)
25
Relative variation of thermal
impedance versus pulse
duration
Surge peak on-state current
versus number of cycles
T =75°C
1E-2
C
th
]
BTA / BTB24 / T25
10
Non repetitive
T initial=25°C
1E-1
j
50
Z
Number of cycles
th(j-a)
Z
BTA26
th(j-a)
T (°C)
C
t (s)
p
1E+0
BTB24 / T25xx /
BTA25 / BTA26
BTA24
75
100
1E+1
100
t=20ms
One cycle
1E+2
BTB26
5E+2
1000
125