BT137X-600F,127 NXP Semiconductors, BT137X-600F,127 Datasheet - Page 3
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BT137X-600F,127
Manufacturer Part Number
BT137X-600F,127
Description
TRIAC 600V 8A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT137X-600127.pdf
(7 pages)
Specifications of BT137X-600F,127
Package / Case
TO-220-3 Full Pack
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
20mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
25mA
Current - Non Rep. Surge 50, 60hz (itsm)
65A, 71A
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
8A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
71 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.65 V @ 10 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934037820127
BT137X-600F
BT137X-600F
BT137X-600F
BT137X-600F
Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
j
SYMBOL PARAMETER
dV
dV
t
gt
= 25 ˚C unless otherwise stated
D
com
/dt
/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T(RMS)
TM
G
j
DM
DM
com
= 125 ˚C; exponential
= 0.1 A; dI
= 12 A; V
= 67% V
= 400 V; T
/dt = 3.6 A/ms; gate
= 8 A;
D
G
DRM(max)
/dt = 5 A/ s
= V
j
BT137X-
= 95 ˚C;
3
DRM(max)
;
;
100
...
-
-
MIN.
...F
50
-
-
...G
200
10
-
TYP.
250
20
BT137X series
2
Product specification
MAX.
-
-
-
Rev 1.400
UNIT
V/ s
V/ s
s