BTA312-800E,127 NXP Semiconductors, BTA312-800E,127 Datasheet - Page 2
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BTA312-800E,127
Manufacturer Part Number
BTA312-800E,127
Description
TRIAC 800V 12A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA312-600D127.pdf
(12 pages)
Specifications of BTA312-800E,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Triac Type
Logic - Sensitive Gate
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.3 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060038127::BTA312-800E::BTA312-800E
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA312_SER_D_E_1
Product data sheet
Type number
BTA312-600D
BTA312-600E
BTA312-800E
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
SC-46
Description
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Rev. 01 — 16 April 2007
Conditions
BTA312-600D; BTA312-600E
BTA312-800E
full sine wave; T
Figure 4
full sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 20 ms
t = 16.7 ms
/dt = 0.2 A/ s
= 20 A; I
and
Figure 2
G
5
= 0.2 A;
mb
j
= 25 C prior to
BTA312 series D and E
12 A Three-quadrant triacs high commutation
and
101 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
600
800
12
95
105
45
100
2
5
0.5
+150
125
Version
SOT78
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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