BTA312-800E,127 NXP Semiconductors, BTA312-800E,127 Datasheet - Page 4
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BTA312-800E,127
Manufacturer Part Number
BTA312-800E,127
Description
TRIAC 800V 12A TO-220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA312-600D127.pdf
(12 pages)
Specifications of BTA312-800E,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Triac Type
Logic - Sensitive Gate
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
105 A
On-state Rms Current (it Rms)
12 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.3 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934060038127::BTA312-800E::BTA312-800E
NXP Semiconductors
BTA312_SER_D_E_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
(1) dI
I
(A)
TSM
(A)
10
10
10
50
40
30
20
10
3
2
0
10
t
10
f = 50 Hz
T
duration; maximum values
p
mb
T
-5
-2
/dt limit
20 ms
= 101 C
10
(1)
-1
10
-4
1
surge duration (s)
003aab687
10
Rev. 01 — 16 April 2007
10
-3
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
BTA312 series D and E
12 A Three-quadrant triacs high commutation
15
10
5
0
base temperature; maximum values
-50
0
10
-2
50
I
T
T
j(init)
= 25 C max
t
p
100
t
p
© NXP B.V. 2007. All rights reserved.
(s)
T
003aab691
003aab686
mb
I
TSM
( C)
t
10
150
-1
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