BTA212-600D,127 NXP Semiconductors, BTA212-600D,127 Datasheet - Page 2
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BTA212-600D,127
Manufacturer Part Number
BTA212-600D,127
Description
TRIAC 600V 12A TO220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212-600E127.pdf
(6 pages)
Specifications of BTA212-600D,127
Package / Case
TO-220AB-3
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3722-5
934055319127
BTA212-600D
934055319127
BTA212-600D
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
June 2003
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
R
R
j
j
SYMBOL
I
I
I
V
V
I
SYMBOL
dV
dI
dI
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
th j-mb
th j-a
T
GT
com
com
D
/dt
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
T
V
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T
T(RMS)
T(RMS)
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
j
D
DM
j
DM
DM
= 17 A
= 125 ˚C
= 110 ˚C; exponential
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 67% V
= 400 V; T
= 400 V; T
/dt = 10 V/ s; gate
/dt = 0.1 V/ s; gate
= 12 A;
= 12 A;
DRM(max)
T
GT
GT
T
T
DRM(max)
= 0.1 A
= 0.1 A
; T
2
= 0.1 A
= 0.1 A
= 0.1 A;
j
j
= 125 ˚C;
= 125 ˚C;
BTA212-
j
BTA212-
= 125 ˚C
;
...D
MIN.
0.25
1.0
3.5
30
-
-
-
-
-
-
-
-
-
-
BTA212 series D, E and F
MIN.
...D
...E
15
25
25
15
60
16
5
5
5
8
MIN.
-
-
-
MAX.
...E
1.6
1.5
0.5
...F
10
10
10
20
30
30
25
70
21
32
TYP.
-
60
-
-
Product specification
MAX.
MAX.
...F
25
25
25
25
40
40
30
1.5
2.0
-
-
-
-
Rev 3.000
UNIT
UNIT
A/ms
A/ms
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V