BTA212-600D,127 NXP Semiconductors, BTA212-600D,127 Datasheet - Page 4
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BTA212-600D,127
Manufacturer Part Number
BTA212-600D,127
Description
TRIAC 600V 12A TO220AB
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212-600E127.pdf
(6 pages)
Specifications of BTA212-600D,127
Package / Case
TO-220AB-3
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
5mA
Current - Non Rep. Surge 50, 60hz (itsm)
95A, 105A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
5 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3722-5
934055319127
BTA212-600D
934055319127
BTA212-600D
Philips Semiconductors
June 2003
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
10 3
10 2
10
Fig.10. Typical and maximum on-state characteristic.
1
Fig.11. Transient thermal impedance Z
20
dIcom/dt (A/ms)
0.001
40
30
20
10
commutating current dI
0.01
0
Fig.12. Minimum critical rate of change of
0.1
0
10
10us
IT / A
1
Rs = 0.0316 Ohms
Vo = 1.175 V
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
40
temperature, dV
0.5
0.1ms
BTA212 series D, E and F
60
unidirectional
pulse width t
1ms
1
tp / s
VT / V
10ms
1.5
80
com
com
typ
/dt =10V/ s.
/dt versus junction
P
D
bidirectional
p
.
0.1s
Product specification
2
t p
100
max
th j-mb
2.5
1s
t
120
Rev 3.000
, versus
F TYPE
E TYPE
D TYPE
10s
T j (˚C)
3
140