BT137-600,127 NXP Semiconductors, BT137-600,127 Datasheet - Page 4
![TRIAC 600V 8A TO220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BT137-600,127
Manufacturer Part Number
BT137-600,127
Description
TRIAC 600V 8A TO220AB
Manufacturer
NXP Semiconductors
Type
TRIACr
Datasheet
1.BT137-800127.pdf
(6 pages)
Specifications of BT137-600,127
Package / Case
TO-220AB-3
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
20mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
65A, 71A
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
8A
Mounting Style
SMD/SMT
Repetitive Peak Off-state Volt
600V
Off-state Voltage
600V
Hold Current
20mA
Gate Trigger Current (max)
70mA
Gate Trigger Voltage (max)
1.5V
Package Type
TO-220AB
Peak Repeat Off Current
500uA
Peak Surge On-state Current (max)
71A
On State Voltage(max)
1.65@10AV
Mounting
Through Hole
Pin Count
3 +Tab
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3656-5
933429280127
BT137-600
933429280127
BT137-600
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT137-600,127
Manufacturer:
NXP Semiconductors
Quantity:
1 600
Philips Semiconductors
June 2001
Triacs
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj / C
Tj / C
Tj / C
50
50
50
100
100
T2+ G+
T2+ G-
T2- G-
T2- G+
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
Fig.11. Transient thermal impedance Z
Fig.12. Typical commutation dV/dt versus junction
1000
25
20
15
10
100
0.01
5
0
10
0.1
10
1
0
10us
IT / A
1
0
Rs = 0.0378 Ohms
dV/dt (V/us)
Vo = 1.264 V
Tj = 125 C
Zth j-mb (K/W)
Tj = 25 C
dIcom/dt =
10 A/ms
0.5
0.1ms
7.9
pulse width t
1ms
1
50
unidirectional
6.1
tp / s
VT / V
10ms
Tj / C
typ
1.5
4.7
P
D
3.6
bidirectional
p
0.1s
.
100
Product specification
2
t p
BT137 series
2.8
off-state dV/dt limit
BT137...G SERIES
BT137...F SERIES
max
BT137 SERIES
T
1s
th j-mb
2.5
/dt. The triac
t
Rev 1.400
, versus
10s
150
3
T
/dt.