T405-600B-TR STMicroelectronics, T405-600B-TR Datasheet - Page 5

• Manufacturer Part Number: T405-600B-TR
• Description: TRIAC 600V 4A 5MA D-PAK
• Manufacturer: STMicroelectronics
• Type: TRIACr

Specifications of T405-600B-TR

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 10mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 30A, 31A
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Current - On State (it (rms) (max): 4A
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 10mA
• Gate Trigger Current (max): 5mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: DPAK
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 31A
• On State Voltage(max): 1.56@5.5AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2505-2

Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
100
500
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
10
0
1
0.01
0.1
0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
R
I
TSM
th(j-a)
dI/dt limitation:
(A), I t (A s)
50A/µs
4
(°C/W)
2
8
2
12
0.10
1.0
(dV/dt)c (V/µs)
16
t (ms)
S(cm²)
p
20
2
t
24
T405
10.0
1.00
28
32
T initial=25°C
I t
j
T435
p
2
T410
I
< 10 ms
TSM
36
10.00
100.0
40
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
0
(dI/dt)c [T ] /
-40
I
GT H L
I
H
,I ,I [T ] /
& I
L
-20
j
25
j
I
GT
(dI/dt)c [T s
0
I
GT H L
,I ,I [T =25°C]
20
j
50
j
pecified]
40
T (°C)
T (°C)
j
j
60
75
80
100
100
T4 Series
120
5/10
125
140