T820-800W STMicroelectronics, T820-800W Datasheet - Page 4

• Manufacturer Part Number: T820-800W
• Description: TRIAC 8A 800V 20MA ISOWATT 220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of T820-800W

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 20mA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A, 105A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: ISOWATT220AB-3
• Current - On State (it (rms) (max): 8A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4805-5

T820W / T830W
4/5
Fig. 5: Surge peak on-state current versus number
of cycles.
110
100
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
8
7
6
5
4
3
2
1
0
90
80
70
60
50
40
30
20
10
0
0
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
-40 -30 -20 -10
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25°C]
1
ITSM(A)
IH & IL
IGT
Repetitive
Tc=100°C
25
0
Non repetitive
Tj initial=25°C
10 20 30 40 50 60 70 80 90 100 110 120 130
10
Number of cycles
50
Tj(°C)
Tj(°C)
75
100
100
t=20ms
1000
125
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding value of I
1000
Fig. 8: Relative variation of critical rate of decrease
of main current versus reapplied dV/dt (typical val-
ues).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
10
0.1
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITSM(A), I t(A s)
dI/dt limitation:
2
50A/µs
2
1.0
0.10
dV/dt (V/µs)
tp(ms)
2
t.
10.0
1.00
ITSM
Tj initial=25°C
I²t
10.00
100.0