SI3202-G-FSR Silicon Laboratories Inc, SI3202-G-FSR Datasheet - Page 15

• Manufacturer Part Number: SI3202-G-FSR
• Manufacturer: Silicon Laboratories Inc

Specifications of SI3202-G-FSR

• Lead Free Status / RoHS Status: Compliant

Table 9. DC Characteristics (V
(V
Table 8. Si3200/2 Characteristics
(V
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
SDITHRU Internal
Pullup Resistance
Relay Driver Source
Impedance
Relay Driver Sink
Impedance
Input Leakage Current
Parameter
TIP/RING Pulldown Transistor Satura-
tion Voltage
TIP/RING Pullup Transistor
Saturation Voltage
Battery Switch Saturation
Impedance
OPEN State TIP/RING Leakage Current
Internal Blocking Diode Forward Voltage
Notes:
DD
DD
1. V
2. I
, V
=
DD1
3.13 to 5.25 V, T
OUT
AC
– V
=
= 60 mA.
DD4
2.5 V
=
PK
4.75 to 5.25 V, T
, R
A
LOAD
=
Symbol
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
R
V
V
R
V
V
=
OUT
I
OH
OL
IH
L
IL
IN
600 Ω.
A
DD
=
GPOa/b, TRD1a/b,TRD2a/b:
0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
, V
DTX, SDO, INT, SDITHRU:
DD1
BATSELa/b, RRDa/b,
V
V
DD1
DD1
Symbol
Test Condition
R
–V
V
V
I
LKG
I
V
SAT
I
O
I
I
CM
OV
–V
–V
I
O
O
O
F
O
DD4
= –40 mA
= –8 mA
< 28 mA
< 85 mA
DD4
DD4
= 8 mA
=
I
(V
= 4.75 V
= 4.75 V
Rev. 1.3
LIM
5 V)
BAT
GND – V
V
V
GND – V
V
RING
= 22 mA, I
TIP
BAT
– V
I
Test Condition
ABIAS
I
I
I
– V
LIM
LIM
LIM
– V
– V
BATH
R
RING
BAT
L
= 22 mA
= 45 mA
= 45 mA,
TIP
BATL
BAT
= 16 mA
= 0 Ω
)/I
ABIAS
Si3220/25 Si3200/02
(Reverse)
(Forward)
OUT
(Forward)
(Reverse)
(Note 2)
0.7 x
V
DD
Min
1
1
= 4 mA
20
(Note 2)
—
—
—
—
—
—
1
– 0.6
V
DD
1
Typ
Min
30
63
—
—
—
—
—
11
—
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
0.8
15
⎯
3
3
4
4
0.3 x
Max
5.25
0.72
±10
0.4
—
—
—
—
Max
100
V
⎯
—
⎯
—
⎯
⎯
DD
Unit
Unit
µA
kΩ
µA
Ω
V
V
V
V
V
V
V
V
V
V
Ω
Ω
15