PIC10F222-E/MC Microchip Technology, PIC10F222-E/MC Datasheet - Page 56
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PIC10F222-E/MC
Manufacturer Part Number
PIC10F222-E/MC
Description
768B Flash, 23B RAM, 4 I/O, 8bit ADC 8 DFN 2X3mm TUBE
Manufacturer
Microchip Technology
Series
PIC® 10Fr
Datasheets
1.PIC10F220-IMC.pdf
(6 pages)
2.PIC10F220-IMC.pdf
(86 pages)
3.PIC10F220-IMC.pdf
(6 pages)
4.PIC10F220-IMC.pdf
(18 pages)
Specifications of PIC10F222-E/MC
Core Processor
PIC
Core Size
8-Bit
Speed
8MHz
Peripherals
POR, WDT
Number Of I /o
3
Program Memory Size
768B (512 x 12)
Program Memory Type
FLASH
Ram Size
23 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-DFN
Processor Series
PIC10F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
23 B
Interface Type
USB
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
4
Number Of Timers
1
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
On-chip Adc
8 bit, 2 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC164334 - MODULE SOCKET FOR 8L 2X3MM DFNAC163020-2 - ADAPTER PROGRAM PIC10F 2X3 DFNAC162070 - HEADER INTRFC MPLAB ICD2 8/14P
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Details
PIC10F220/222
10.2
DS41270E-page 54
DC CHARACTERISTICS
D001
D002
D003
D010
D020
D022
Note 1:
Param
No.
2:
3:
4:
*
DC Characteristics: PIC10F220/222 (Extended)
V
Sym
I
V
V
a) The test conditions for all I
b) For standby current measurements, the conditions are the same, except that the device is in Sleep mode.
WDT
I
I
These parameters are characterized but not tested.
Data in the Typical (“Typ”) column is based on characterization results at 25°C. This data is for design guidance only
and is not tested.
This is the limit to which V
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus loading, bus
rate, internal code execution pattern and temperature also have an impact on the current consumption.
Power-down current is measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
or V
enabled.
POR
DD
PD
DD
DR
All I/O pins tri-stated, pulled to V
SS
. The peripheral current is the sum of the base I
Supply Voltage
RAM Data Retention Voltage
V
to ensure Power-on Reset
Supply Current
Power-down Current
WDT Current
DD
Start Voltage
Characteristic
(4)
(3)
DD
can be lowered in Sleep mode without losing RAM data.
(4)
DD
measurements in active operation mode are:
SS
(2)
, T0CKI = V
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40×C £ T
Min
1.5*
2.0
—
—
—
—
—
—
—
—
—
DD
, MCLR = V
Typ
0.625
0.800
Vss
175
250
0.1
1.0
PD
1
7
(1)
and the additional current consumed when the peripheral is
Max
275
400
5.5
1.1
1.5
—
—
15
18
22
9
DD
; WDT enabled/disabled as specified.
Units
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
A
See Figure 10-1
Device in Sleep mode
V
V
V
V
V
V
V
V
£ +125×C (extended)
DD
DD
DD
DD
DD
DD
DD
DD
= 2.0V, Fosc = 4 MHz
= 5.0V, Fosc = 4 MHz
= 2.0V, Fosc = 8 MHz
= 5.0V, Fosc = 8 MHz
= 2.0V
= 5.0V
= 2.0V
= 5.0V
© 2007 Microchip Technology Inc.
Conditions
DD