PIC18F86J50T-I/PT Microchip Technology, PIC18F86J50T-I/PT Datasheet - Page 5

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PIC18F86J50T-I/PT

Manufacturer Part Number
PIC18F86J50T-I/PT
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,TQFP,64PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets

Specifications of PIC18F86J50T-I/PT

Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
65
Program Memory Size
64KB (32K x 16)
Program Memory Type
FLASH
Ram Size
3.8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TFQFP
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
3904 B
Interface Type
I2C, MSSP, SPI, EUSART
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
65
Number Of Timers
5
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136, DM183022, DM183032
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
AC162087 - HEADER MPLAB ICD2 18F87J50 68/84MA180021 - MODULE PLUG-IN 18F87J50 FS USBAC164328 - MODULE SKT FOR 80TQFP
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
Other names
PIC18F86J50T-I/PTTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F86J50T-I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
Data Sheet Clarifications
The following typographic corrections and clarifications
are to be noted for the latest version of the device data
sheet (DS39775B):
TABLE 28-1:
© 2009 Microchip Technology Inc.
DC CHARACTERISTICS
D130
D131
D132
D133A T
D133B T
D134
D135
D140
Param
Note:
No.
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
I
V
T
DDP
Sym
IW
IE
RETD
WE
P
PR
PEW
only and are not tested.
Corrections are shown in bold. Where
possible, the original bold text formatting
has been removed for clarity.
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write
Self-Timed Write Cycle Time
Self-Timed Page Erase Cycle
Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DDCORE
V
V
DD
DDCORE
Characteristic
for Read
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
V
2.35
2.25
10K
Min
20
MIN
PIC18F87J50 FAMILY
Typ†
33.0
1. Module: Table 28-1: Memory
2.8
10
On page 430, parameter D132B is renamed, and
the minimum and maximum voltage levels and
conditions column of the Self-Timed Erase or Write
for V
parameter number and conditions column are
changed.
The changed content is indicated in bold text in
Table 28-1:
Max
DD
3.6
3.6
2.7
1
and V
Programming Requirements
Units
Year Provided no other
E/W -40°C to +85°C
mA
ms
ms
DDCORE
V
V
V
A
≤ +85°C for industrial
V
voltage
ENVREG tied to V
ENVREG tied to V
specifications are violated
For each physical address
MIN
for are included. The T
= Minimum operating
Conditions
DS80481A-page 5
DD
SS
WE

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