PIC24F16KA101T-I/SS Microchip Technology, PIC24F16KA101T-I/SS Datasheet - Page 56

16KB Flash, 2KB RAM, 512B EEPROM, 16 MIPS, 16 I/O,16-bit PIC24F Family, NanoWatt

PIC24F16KA101T-I/SS

Manufacturer Part Number
PIC24F16KA101T-I/SS
Description
16KB Flash, 2KB RAM, 512B EEPROM, 16 MIPS, 16 I/O,16-bit PIC24F Family, NanoWatt
Manufacturer
Microchip Technology
Series
PIC® XLP™ 24Fr

Specifications of PIC24F16KA101T-I/SS

Core Processor
PIC
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, IrDA, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
16KB (5.5K x 24)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 9x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
MA240017 - MODULE PLUG-IN PIC24F16KA102 PIM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC24F16KA101T-I/SS
Manufacturer:
MICROCHIR
Quantity:
20 000
PIC24F16KA102 FAMILY
6.4.1
The data EEPROM can be fully erased, or can be
partially erased, at three different sizes: one word, four
words or eight words. The bits, NVMOP<1:0>
(NVMCON<1:0>), decide the number of words to be
erased. To erase partially from the data EEPROM, the
following sequence must be followed:
1.
2.
3.
4.
5.
6.
EXAMPLE 6-2:
DS39927B-page 54
int __attribute__ ((space(eedata))) eeData = 0x1234; // Variable located in EEPROM
Configure NVMCON to erase the required
number of words: one, four or eight.
Load TBLPAG and WREG with the EEPROM
address to be erased.
Clear NVMIF status bit and enable NVM
interrupt (optional).
Write the key sequence to NVMKEY.
Set the WR bit to begin erase cycle.
Either poll the WR bit or wait for the NVM
interrupt (NVMIF set).
unsigned int offset;
// Set up NVMCON to erase one word of data EEPROM
NVMCON = 0x4058;
// Set up a pointer to the EEPROM location to be erased
TBLPAG = __builtin_tblpage(&eeData);
offset = __builtin_tbloffset(&eeData);
__builtin_tblwtl(offset, 0);
asm volatile ("disi #5");
__builtin_write_NVM();
ERASE DATA EEPROM
SINGLE-WORD ERASE
Preliminary
// Initialize EE Data page pointer
// Initizlize lower word of address
// Write EEPROM data to write latch
// Disable Interrupts For 5 Instructions
// Issue Unlock Sequence & Start Write Cycle
A typical erase sequence is provided in Example 6-2.
This example shows how to do a one-word erase. Sim-
ilarly, a four-word erase and an eight-word erase can
be done. This example uses C library procedures to
manage the Table Pointer (builtin_tblpage and
builtin_tbloffset) and the Erase Page Pointer
(builtin_tblwtl). The memory unlock sequence
(builtin_write_NVM) also sets the WR bit to initiate
the operation and returns control when complete.
© 2009 Microchip Technology Inc.

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