PIC24FJ64GA108-E/PT Microchip Technology, PIC24FJ64GA108-E/PT Datasheet - Page 60
![16-bit, 16 MIPS, 64KB Flash, 16Kb RAM, 84 I/O, NanoWatt 80 TQFP 12x12x1mm TRAY](/photos/16/13/161322/tqfp64_sml.jpg)
PIC24FJ64GA108-E/PT
Manufacturer Part Number
PIC24FJ64GA108-E/PT
Description
16-bit, 16 MIPS, 64KB Flash, 16Kb RAM, 84 I/O, NanoWatt 80 TQFP 12x12x1mm TRAY
Manufacturer
Microchip Technology
Series
PIC® 24Fr
Datasheet
1.PIC24FJ128GA106-IPT.pdf
(330 pages)
Specifications of PIC24FJ64GA108-E/PT
Core Processor
PIC
Core Size
16-Bit
Speed
32MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
69
Program Memory Size
64KB (22K x 24)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
*
Processor Series
PIC24FJ256GA110
Core
PIC
Data Bus Width
16 bit
Data Ram Size
16 KB
Interface Type
UART, I2C, SPI
Maximum Clock Frequency
8 MHz
Number Of Timers
5
Operating Supply Voltage
3.6 V
Maximum Operating Temperature
- 40 C to + 85 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC24FJ64GA108-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- Current page: 60 of 330
- Download datasheet (3Mb)
process is as follows:
PIC24FJ256GA110 FAMILY
5.6.1
The user can program one row of Flash program memory
at a time. To do this, it is necessary to erase the 8-row
erase block containing the desired row. The general
1.
2.
3.
4.
EXAMPLE 5-1:
DS39905E-page 60
; Set up NVMCON for block erase operation
; Init pointer to row to be ERASED
Read
(512 instructions) and store in data RAM.
Update the program data in RAM with the
desired new data.
Erase the block (see
implementation in assembler):
a)
b)
c)
d)
e)
Write the first 64 instructions from data RAM into
the program memory buffers (see
for the implementation in assembler).
Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE
(NVMCON<14>) bits.
Write the starting address of the block to be
erased into the TBLPAG and W registers.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
MOV
MOV
MOV
MOV
MOV
TBLWTL W0, [W0]
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
eight
#0x4042, W0
W0, NVMCON
#tblpage(PROG_ADDR), W0
W0, TBLPAG
#tbloffset(PROG_ADDR), W0
#5
#0x55, W0
W0, NVMKEY
#0xAA, W1
W1, NVMKEY
NVMCON, #WR
(NVMCON<6>)
rows
ERASING A PROGRAM MEMORY BLOCK (ASSEMBLY LANGUAGE CODE)
of
Example 5-1
program
and
Example 5-3
memory
for an
WREN
;
; Initialize NVMCON
;
; Initialize PM Page Boundary SFR
; Initialize in-page EA[15:0] pointer
; Set base address of erase block
; Block all interrupts with priority <7
; for next 5 instructions
; Write the 55 key
;
; Write the AA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
5.
6.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
must wait for the programming time until programming
is complete. The two instructions following the start of
the programming sequence should be NOPs, as shown
in
Example
Note:
Write the program block to Flash memory:
a)
b)
c)
d)
Repeat Steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash
memory.
Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
Write 55h to NVMKEY.
Write AAh to NVMKEY.
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration
of the write cycle. When the write to Flash
memory is done, the WR bit is cleared
automatically.
5-5.
The equivalent C code for these steps,
prepared using Microchip’s MPLAB C30
compiler and a specific library of built-in
hardware
Examples 5-2,
2010 Microchip Technology Inc.
functions,
5-4
and 5-6.
is
shown
in
Related parts for PIC24FJ64GA108-E/PT
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![TC1014-2.7VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1014-5.0VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1055-2.5VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1055-2.7VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1055-2.8VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1055-4.0VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1186-2.5VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet:
![TC1186-2.85VCT](/images/manufacturer_photos/0/4/440/microchip_technology_inc__tmb.jpg)
Part Number:
Description:
Manufacturer:
Microchip Technology Inc.
Datasheet: