S29GL032M10TAIR40 Spansion Inc., S29GL032M10TAIR40 Datasheet - Page 143

• Manufacturer Part Number: S29GL032M10TAIR40
• Description: IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,TSSOP,48PIN,PLASTIC
• Manufacturer: Spansion Inc.

Erase And Programming Performance
Notes:
1.
2.
3.
4.
5.
6.
7.
April 30, 2004 S29GLxxxM_00A5
Parameter
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time Notes (3), (5)
Total Accelerated Effective Write Buffer Program Time Notes (4),
(5)
Chip Program Time
Typical program and erase times assume the following conditions: 25°C, V
Under worst case conditions of 90
Effective programming time (typ) is 15 µs (per word), 7.5 µs (per byte).
Effective accelerated programming time (typ) is 12.5 µs (per word), 6.3 µs (per byte).
Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 31 and 32 for
further information on command definitions.
°
C; Worst case V
P r e l i m i n a r y
S29GLxxxM MirrorBit
CC
, 100,000 cycles.
S29GL032M
S29GL064M
S29GL128M
S29GL256M
S29GL032M
S29GL064M
S29GL128M
S29GL256M
TM
Flash Family
CC
Typ (Note 1)
= 3.0V, 10,000 cycles; checkerboard data pattern.
31.5
128
256
240
200
126
252
0.5
32
64
63
(Note 2)
Max
128
256
512
3.5
64
Unit
sec
sec
sec
µs
µs
ing prior to
Comments
programm
overhead
Excludes
Excludes
Note (6)
Note (7)
erasure
system
level
00h
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