M25P40-VMW6GB NUMONYX, M25P40-VMW6GB Datasheet - Page 16

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M25P40-VMW6GB

Manufacturer Part Number
M25P40-VMW6GB
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25P40-VMW6GB

Cell Type
NOR
Density
4Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
SO W
Program/erase Volt (typ)
2.3 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
512K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Compliant
5
16/61
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Table 3.
524,288 bytes (8 bits each)
8 sectors (512 Kbits, 65,536 bytes each)
2048 pages (256 bytes each)
Sector
7
6
5
4
3
2
1
0
Memory organization
70000h
60000h
50000h
40000h
30000h
20000h
10000h
00000h
Address range
7FFFFh
6FFFFh
5FFFFh
4FFFFh
3FFFFh
2FFFFh
1FFFFh
0FFFFh

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