CY7C225A-30DMB Cypress Semiconductor Corp, CY7C225A-30DMB Datasheet

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CY7C225A-30DMB

Manufacturer Part Number
CY7C225A-30DMB
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C225A-30DMB

Density
4Kb
Organization
512x8
Operating Current
120mA
Interface Type
Parallel
Package Type
CDIP
Operating Temperature Classification
Military
Operating Supply Voltage (typ)
5V
Operating Temp Range
-55C to 125C
Pin Count
24
Mounting
Through Hole
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C225A-30DMB
Manufacturer:
CY
Quantity:
4
Cypress Semiconductor Corporation
Document #: 38-04001 Rev. *C
Features
• CMOS for optimum speed/power
• High speed
• Low power
• Synchronous and asynchronous output enables
• On-chip edge-triggered registers
• Buffered common PRESET and CLEAR inputs
• EPROM technology, 100% programmable
• Slim 300-mil, 24-pin plastic or hermetic DIP, 28-pin LCC, or
• 5V± 10% V
• TTL-compatible I/O
Logic Block Diagram
CLR
— 25 ns address set-up
— 12 ns clock to output
— 495 mW (Commercial)
— 660 mW (Military)
28-pin PLCC
CP
PS
E
E
S
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
ADDRESS
DECODER
ADDRESS
ADDRESS
COLUMN
CC
ROW
, commercial and military
PROGRAMMABLE
ARRAY
MULTIPLEXER
198 Champion Court
S
TRIGGERED
REGISTER
EDGE-
8-BIT
R
Functional Description
The CY7C225A is a high-performance 512-word by 8-bit
electrically programmable read only memory packaged in a
slim 300-mil plastic or hermetic DIP, 28-pin leadless chip
carrier, and 28-pin PLCC. The memory cells utilize proven
EPROM floating gate technology and byte-wide intelligent
programming algorithms.
The CY7C225A replaces bipolar devices and offers the advan-
tages of lower power, superior performance, and high
programming yield. The EPROM cell requires only 12.5V for
the supervoltage and low current requirements allow for gang
programming. The EPROM cells allow for each memory
location to be tested 100%, as each location is written into,
erased, and repeatedly exercised prior to encapsulation. Each
PROM is also tested for AC performance to guarantee that
after customer programming the product will meet AC specifi-
cation limits.
• Direct replacement for bipolar PROMs
• Capable of withstanding greater than 2001V static
CP
discharge
512 x 8 Registered PROM
San Jose
O
O
O
O
O
O
O
O
7
6
5
4
3
2
1
0
,
CA 95134-1709
Pin Configurations
GND
NC
A
A
A
A
A
O
O
O
O
A
A
A
A
A
A
A
A
4
3
2
1
0
0
7
5
4
1
0
0
1
2
6
3
2
5
6
7
8
9
10
11
12
1
2
3
4
5
6
7
8
9
10
11
12
LCC/PLCC
4
Top View
Top View
13
Revised August 16, 2006
3 2 1
DIP
141516 17
28
24
23
22
21
20
19
18
17
16
15
14
13
27
CY7C225A
18
26
25
24
23
22
21
20
19
E
V
A
PS
E
CLR
CP
O
O
O
O
O
408-943-2600
CC
8
S
7
6
5
4
3
E
CLR
E
CP
NC
O
O
S
7
6
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CY7C225A-30DMB Summary of contents

Page 1

... PLCC. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithms. The CY7C225A replaces bipolar devices and offers the advan- tages of lower power, superior performance, and high programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming ...

Page 2

... Guaranteed Input Logical LOW Voltage for All Inputs GND < V < Note 4 [5] GND < V < Output Disabled OUT CC [ Max 0.0V CC OUT Commercial OUT V = Max. CC Military CY7C225A 7C225A-40 Unit 120 mA Ambient Temperature V CC ° ° + ± 10% ° ° − +125 C 5V ± 10% Min. ...

Page 3

... LOW-to-HIGH transition of the clock. This unique feature allows the CY7C225A decoders and sense amplifiers to access the next location while previously addressed data remains stable on the outputs. ...

Page 4

... Note 7. Applies only when the synchronous (E ) function is used. S Document #: 38-04001 Rev. *C [3,4] 7C225A-25 7C225A-30 Min. Max. Min [ SES HES SES t HES t t PWC PWC t PWC PWC t t COS HZC CY7C225A 7C225A-40 Unit Max. Min. Max HES t PWC HZE DOE Page [+] Feedback ...

Page 5

... IHP A – IHP ILP A– IHP IHP A – ILP IHP A – IHP ILP Figure 1. Programming Pinouts DIP VFY PGM CY7C225A [8] −O CLR − − High High Zeros Ones − IHP IHP 7 − IHP IHP High Z PP IHP IHP − IHP IHP 7 V ...

Page 6

... TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 30.0 25.0 20.0 15.0 10.0 T =25°C A 5.0 V =4.5V CC 0.0 0 200 400 600 800 CAPACITANCE (pF) CY7C225A CLOCK TO OUTPUT TIME vs 1.6 1.4 1.2 1.0 0.8 T =25°C A 0.6 125 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE (V) NORMALIZED SET-UP TIME vs. TEMPERATURE 1 ...

Page 7

... Group A Subgroup Testing DC Characteristics Parameter Subgroups Package Diagrams Figure 2. 28-Lead Plastic Leaded Chip Carrier J64 Document #: 38-04001 Rev. *C Package Package Type Type P13 24-Lead (300-Mil) Molded DIP Switching Characteristics Parameter CY7C225A Operating Range Commercial Subgroups 10, 11 51-85001-*A Page [+] Feedback ...

Page 8

... Package Diagrams (Continued) Figure 3. 28-Square Leadless Chip Carrier L64 Document #: 38-04001 Rev. *C MIL-STD-1835 C-4 51-80051-** CY7C225A Page [+] Feedback ...

Page 9

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C225A 51-85013-*B ...

Page 10

... Document History Page Document Title: CY7C225A 512 x 8 Registered PROM Document Number: 38-04001 Issue REV. ECN NO. Date ** 113858 03/06/02 *A 118892 10/09/02 *B 122242 12/27/02 *C 499538 See ECN Document #: 38-04001 Rev. *C Orig. of Description of Change Change DSG Changed from Spec number: 38-00228 to 38-04001 GBI ...

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