M38510/01205BEA E2V, M38510/01205BEA Datasheet - Page 22
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M38510/01205BEA
Manufacturer Part Number
M38510/01205BEA
Description
Manufacturer
E2V
Datasheet
1.M3851001205BEA.pdf
(55 pages)
Specifications of M38510/01205BEA
Lead Free Status / RoHS Status
Supplier Unconfirmed
Description of device type 04 - Continued
Circuit C. This circuit is used to obtain extended pulse width. This configuration obtains extended pulse widths,
because of the larger timing resistor allowed by Beta multiplication.
Electrolytics with high ( > 5 µA ) reverse leakage currents can be used.
R < R
R
Q1: NPN silicon transistor with h
t
NOTES:
W
X
≈ 0.3 RC
(minimum) < RY < (maximum) (5 ≤ R
1.
2.
3.
X
(0.7) (h
C
3.0 µA or if stray capacitance from either terminal to ground is more than 50 pF, the timing equations may
not represent the pulse with obtained.
Configuration B and C are not recommended with retriggerable operation.
R
X
X
X
may vary from 0 to any necessary value available. If however, the capacitor has leakage approaching
may vary from 5.0 to 25 kΩ
.
FE
Q1) or < 2.5 MΩ whichever is lesser.
FE
FIGURE 3. Device descriptions – Continued.
requirements of above equations, such as 2N5961 or 2N5962.
Y
≤ 10 kΩ is recommended).
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