BAR64V-06-GS18 Vishay, BAR64V-06-GS18 Datasheet

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BAR64V-06-GS18

Manufacturer Part Number
BAR64V-06-GS18
Description
Manufacturer
Vishay
Datasheet

Specifications of BAR64V-06-GS18

Lead Free Status / RoHS Status
Compliant
RF PIN Diodes - Dual, Common Anode in SOT-23
Description
Characterized by low reverse Capacitance the PIN
Diodes BAR64V-06 was designed for RF signal
switching and tuning. As a function of the forward
bias current the forward resistance (rf) can be
adjusted over a wide range. A long carrier life time
offers low signal distortion for signals over 10 MHz up
to 3 GHz. Typical applications for this PIN Diodes are
switches and attenuators in wireless, mobile and TV-
systems.
Features
Applications
For frequency up to 3 GHz
RF-signal tuning
Signal attenuator and switches
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
Document Number 85696
Rev. 1.3, 15-Apr-05
• High reverse Voltage
• Small reverse capacitance
• High breakdown voltage
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
BAR64V-06
Reverse voltage
Forward current
Junction temperature
Storage temperature range
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Part
Parameter
BAR64V-06-GS18 or BAR64V-06-GS08
Test condition
Ordering code
e3
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Symbol
T
3
V
I
T
stg
F
R
j
D6
2
Marking
1
- 55 to + 150
Vishay Semiconductors
Value
100
100
150
1
BAR64V-06
3
Tape and Reel
2
Remarks
www.vishay.com
17033
Unit
mA
°C
°C
V
1

Related parts for BAR64V-06-GS18

BAR64V-06-GS18 Summary of contents

Page 1

... WEEE 2002/96/EC Applications For frequency GHz RF-signal tuning Signal attenuator and switches Mobile, wireless and TV-Applications Parts Table Part BAR64V-06 BAR64V-06-GS18 or BAR64V-06-GS08 Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Reverse voltage Forward current Junction temperature Storage temperature range Document Number 85696 Rev ...

Page 2

... BAR64V-06 Vishay Semiconductors Electrical Characteristics °C, unless otherwise specified amb Parameter = 10 µA Reverse voltage I R Reverse current Forward voltage Diode capacitance MHz MHz MHz, V Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 ...

Page 3

... Document Number 85696 Rev. 1.3, 15-Apr-05 3500 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) 0.52 (0.020) 2.0 (0.079) 0.95 (0.037) BAR64V-06 Vishay Semiconductors ISO Method E 0.9 (0.035) 0.95 (0.037) 17418 www.vishay.com 3 ...

Page 4

... BAR64V-06 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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