IRG4IBC30KD-110 International Rectifier, IRG4IBC30KD-110 Datasheet - Page 2

• Manufacturer Part Number: IRG4IBC30KD-110
• Manufacturer: International Rectifier

Specifications of IRG4IBC30KD-110

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Not Compliant

IRG4IBC30KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
5.4
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.54
2.21
2.88
2.36
0.60
0.58
1.18
1.69
160
210
160
920
110
220
180
160
-12
8.1
1.4
1.3
7.5
3.5
5.6
67
11
25
60
42
80
58
42
27
42
80
80
—
—
—
—
—
—
2500
±100
250
100
250
120
120
180
600
2.7
6.0
1.7
1.6
1.6
6.0
16
37
60
10
—
—
—
—
— mV/°C V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
ns
µs
pF
V
V
S
V
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 16A, T
= 12A, T
= 16A, V
= 16A, V
= 16A
= 28A
= 12A
= 16A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
G
G
G
C
= 250µA
= 250µA
J
= 480V
= 480V
= 600V
= 600V, T
= 16A
= 23
= 125°C
= 10 , V
= 23
14
15
17
16
See Fig.8
See Fig. 10,11,18
See Fig. 7
www.irf.com
V
See Fig. 2, 5
See Fig. 13
di/dt = 200Aµs
V
J
CPK
GE
R
I
= 150°C
F
= 200V
= 12A
= 15V
< 500V