IRG4IBC30KD-110 International Rectifier, IRG4IBC30KD-110 Datasheet - Page 5

• Manufacturer Part Number: IRG4IBC30KD-110
• Manufacturer: International Rectifier

Specifications of IRG4IBC30KD-110

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Not Compliant

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Fig. 9 - Typical Switching Losses vs. Gate
1.50
1.40
1.30
1.20
1.10
1.00
1500
1200
900
600
300
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 480V
= 15V
= 25 C
= 16A
R
V
10
G
CE
R
°
G

V
C
C
C
, Gate Resistance (Ohm)
Resistance
, Collector-to-Emitter Voltage (V)
, Gate Resistance (
GE
ies
res
oes

C ies
C oes
C res


=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0

R
V
V

V
GE
CC
I
G
Fig. 8 - Typical Gate Charge vs.
CC
C
= 15V
= 480V
= Ohm
= 400V
= 16A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
23
Q , Total Gate Charge (nC)
J
G
20
0
IRG4IBC30KD
20
40
40
60
80 100 120 140 160
60

I =

I =

I =
C
C
C
°
32
16
8.0A
8
A
A
A
5
80