NE662M04-T2-A California Eastern Labs, NE662M04-T2-A Datasheet - Page 4
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NE662M04-T2-A
Manufacturer Part Number
NE662M04-T2-A
Description
Manufacturer
California Eastern Labs
Datasheet
1.NE662M04-T2-A.pdf
(10 pages)
Specifications of NE662M04-T2-A
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
3.3V
Collector-base Voltage(max)
15V
Emitter-base Voltage (max)
1.5V
Collector Current (dc) (max)
35mA
Dc Current Gain (min)
50
Power Dissipation
115mW
Frequency (max)
25GHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
4
Lead Free Status / RoHS Status
Compliant
TYPICAL PERFORMANCE CURVES
250
200
150
100
50
50
40
30
20
10
25
20
15
10
5
0
0
0
1
1
TOTAL POWER DISSIPATION vs.
Mounted on a Ceramic Substrate
Free Air
Base to Emitter Voltage, V
BASE TO EMITTER VOLTAGE
Ambient Temperature, T
200
25
COLLECTOR CURRENT vs.
V
5
AMBIENT TEMPERATURE
CE
Collector Current, I
COLLECTOR CURRENT
GAIN BANDWIDTH vs.
= 2 V
V
CE
400
10
50
= 2 V
600
20
75
V
CE
100
800
25
C
Infinite Heatsink
= 1 V
(mA)
A
BE
(°C)
1000
125
30
(V)
1200
150
35
(T
A
= 25°C)
0.50
0.40
0.30
0.20
0.10
120
110
100
80
70
60
20
90
50
40
30
30
20
10
0
0
.1
0
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, V
Collector to Emitter Voltage, V
FEEDBACK CAPACITANCE vs.
V
1
COLLECTOR CURRENT vs.
CE
1.0
COLLECTOR CURRENT
Collector Current, l
DC CURRENT GAIN vs.
= 2 V
1.0
2
2.0
3
2.0
3.0
5
C
7
(mA)
Freq. = 1 MHz
10
4.0
IB = 5 A
CE
CE
255 A
355 A
305 A
205 A
155 A
105 A
3.0
55 A
(V)
(V)
20 30
3.5
5.0