NE662M04-T2-A California Eastern Labs, NE662M04-T2-A Datasheet - Page 5

• Manufacturer Part Number: NE662M04-T2-A
• Manufacturer: California Eastern Labs

Specifications of NE662M04-T2-A

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 3.3V
• Collector-base Voltage(max): 15V
• Emitter-base Voltage (max): 1.5V
• Collector Current (dc) (max): 35mA
• Dc Current Gain (min): 50
• Power Dissipation: 115mW
• Frequency (max): 25GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / RoHS Status: Compliant

TYPICAL PERFORMANCE CURVES
5.00
0.00
30.00
25.00
20.00
15.00
10.00
30
20
10
40
30
20
10
0
0
0.1
0.1
1
POWER GAIN, MAXIMUM AVAILABLE
MAXIMUM STABLE GAIN, INSERTION
f = 1 GHz, V
FORWARD INSERTION GAIN AND
GAIN vs. COLLECTOR CURRENT
FORWARD INSERTION GAIN
MAXIMUM AVAILABLE GAIN
Collector Current, I
CE
MSG
Frequency, f (GHz)
Frequency, f (GHz)
vs. FREQUENCY
vs. FREQUENCY
= 2 V
V
1
I
1
CE
10
C
IS
I
= 5 mA
V
IS
C
MSG
21
= 2 V,
CE
21
= 20 mA
I
V
2
CE
I
= 2 V,
2
2
2
C
= 2 V, I
(mA)
MAG
C
= 20 mA
MAG
10
12
10
100
(T
A
= 25°C)
30.00
10.00
5.00
0.00
25.00
20.00
15.00
40
30
20
10
0
0.1
1
MAXIMUM STABLE GAIN, INSERTION
POWER GAIN, MAXIMUM AVAILABLE
MSG
FORWARD INSERTION GAIN AND
GAIN vs. COLLECTOR CURRENT
MAXIMUM AVAILABLE GAIN
Collector Current, I
Frequency, f (GHz)
vs. FREQUENCY
MSG
1
10
IS
IS
21
MAG
21
I
2
I
V
f = 2 GHz, V
2
CE
2
C
= 2 V, I
(mA)
C
CE
= 5 mA
MAG
= 2 V
100
10