TIM5964-8UL Toshiba, TIM5964-8UL Datasheet

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TIM5964-8UL

Manufacturer Part Number
TIM5964-8UL
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM5964-8UL

Configuration
Single
Gate-source Voltage (max)
5V
Drain Current (max)
7A
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIM5964-8UL
Manufacturer:
HITTITE
Quantity:
401
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
P1dB=39.5dBm at 5.9GHz to 6.4GHz
G1dB=10.0dB at 5.9GHz to 6.4GHz
Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)
HIGH POWER
HIGH GAIN
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
η
I
th(c-c)
GSoff
IM
DSS
DS1
DS2
gm
ΔG
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
f
= 3.0A
= 30mA
= -100 μ A
Two-Tone Test
= 5.9 to 6.4GHz
CONDITIONS
= 3V
=
=
CONDITIONS
= 0V
Po= 28.5dBm
IDSset=1.8A
V
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
DS
X Rth(c-c)
MICROWAVE POWER GaAs FET
= 10
TIM5964-8UL
V
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
MIN.
38.5
-1.0
-44
9.0
-5
Rev. Jun. 2009
TYP. MAX.
TYP. MAX.
1800
39.5
10.0
-2.5
-47
2.2
2.2
5.2
2.5
36
±0.6
-4.0
2.6
2.6
3.5
80

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TIM5964-8UL Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM5964-8UL BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM5964-8UL SYMBOL ...

Page 3

... RF PERFORMANCE 10V DS ≅ Pin= 29.5dBm 5.7 5 6.15GHz V = 10V DS 41 ≅ TIM5964-8UL Output Power vs. Frequency 5.9 6 6.1 6.2 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 6.3 6.4 6.5 6 ...

Page 4

... TIM5964-8UL Power Dissipation vs. Case Temperature (℃) IM3 vs. Output Power Characteristics - 10V DS ≅ 6.15GHz Δ f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...

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