SI4966DY-T1-E3 Vishay, SI4966DY-T1-E3 Datasheet
SI4966DY-T1-E3
Specifications of SI4966DY-T1-E3
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SI4966DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4966DY -T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4966DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70718 S09-0869-Rev. D, 18-May-09 2 1.5 V 2.5 3.0 3.5 4.0 4000 3200 2400 1600 Si4966DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss 800 C rss ...
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... Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...