si4966dy Vishay, si4966dy Datasheet
si4966dy
Available stocks
Related parts for si4966dy
si4966dy Summary of contents
Page 1
... 25_C 70_C 25_C 70_C stg Symbol R thJA Si4966DY Vishay Siliconix N-Channel MOSFET Limit Unit "12 "7.1 "5 "40 1 1.3 – ...
Page 2
... Si4966DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
Page 3
... 1 3.0 3.5 4.0 0 4000 3200 2400 1600 800 1.6 1.4 1.2 1.0 0.8 0 –50 Si4966DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C –55_C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
Page 4
... Si4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 mA D –0.0 –0.2 –0.4 –0.6 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...