si4966dy Vishay, si4966dy Datasheet - Page 4

• Manufacturer Part Number: si4966dy
• Description: Dual N-channel 2.5-v G-s Mosfet
• Manufacturer: Vishay

Si4966DY
Vishay Siliconix
www.vishay.com S FaxBack 408-970-5600
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
–0.0
–0.2
–0.4
–0.6
40
10
0.4
0.2
2
1
1
0
–50
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
–25
V
SD
0.4
0
T
– Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150_C
Single Pulse
J
– Temperature (_C)
25
0.6
10
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.8
I
D
= 250 mA
75
T
J
= 25_C
1.0
100
1.2
10
125
–2
S
1.4
150
W
P l
D
10
–1
ti
(
0.10
0.08
0.06
0.04
0.02
30
24
18
12
)
0.01
0
6
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 7.1 A
1
V
GS
1
0.10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
– Gate-to-Source Voltage (V)
Single Pulse Power
P
DM
JM
– T
2
Time (sec)
t
1
A
= P
t
2
DM
1.00
S-54939—Rev. A, 29-Sep-97
Z
thJA
Document Number: 70718
thJA
3
t
t
1
2
(t)
10
= 62.5
_
C/W
4
10.00
30
5