IRFR9220TR Vishay, IRFR9220TR Datasheet

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IRFR9220TR

Manufacturer Part Number
IRFR9220TR
Description
-200V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A D-PAK PACK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9220TR

Rohs Compliant
NO
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9220TRLPBF
Manufacturer:
VISHAY
Quantity:
660
Part Number:
IRFR9220TRLPBF
Manufacturer:
VISHAY
Quantity:
665
Part Number:
IRFR9220TRPBF
Manufacturer:
VISHAY
Quantity:
31 822
Part Number:
IRFR9220TRRPBF
Manufacturer:
VISHAY
Quantity:
3 553
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S-82992-Rev. B, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 3.9 A, dI/dt ≤ 95 A/µs, V
= - 50 V, Starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
DPAK (TO-252)
IRFR9220PbF
SiHFR9220-E3
IRFR9220
SiHFR9220
J
G
= 25 °C, L = 35 mH, R
c
D S
a
a
V
b
DD
GS
≤ V
= - 10 V
e
DS
G
, T
e
Single
J
- 200
P-Channel MOSFET
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
≤ 150 °C.
3.3
20
11
DPAK (TO-252)
IIRFR9220TRLPbF
SiHFR9220TL-E3
IRFR9220TRL
SiHFR9220TL
G
= 25 Ω, I
C
S
Power MOSFET
D
V
= 25 °C, unless otherwise noted
GS
1.5
at - 10 V
AS
a
a
= - 3.6 A (see fig. 12).
T
T
for 10 s
C
A
a
= 25 °C
= 25 °C
a
T
T
C
C
DPAK (TO-252)
IRFR9220TRRPbF
SiHFR9220TR-E3
IRFR9220TRR
SiHFR9220TR
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220, SiHFR9220)
• Straight Lead (IRFUFU9220, SiHFU9220)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
a
DS
GS
AS
AR
D
D
a
stg
DPAK (TO-252)
IRFR9220TRPbF
SiHFR9220T-E3
IRFR9220TR
SiHFR9220T
- 55 to + 150
a
a
LIMIT
0.020
- 200
260
± 20
- 3.6
- 2.3
0.33
- 3.6
- 5.0
- 14
310
4.2
2.5
42
a
a
Vishay Siliconix
d
IPAK (TO-251)
IRFU9220PbF
SiHFU9220-E3
IRFU9220
SiHFU9220
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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