IRFR9220TR Vishay, IRFR9220TR Datasheet - Page 2

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IRFR9220TR

Manufacturer Part Number
IRFR9220TR
Description
-200V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A D-PAK PACK
Manufacturer
Vishay
Datasheets

Specifications of IRFR9220TR

Rohs Compliant
NO
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9220TRPBF
Manufacturer:
VISHAY
Quantity:
31 822
Part Number:
IRFR9220TRRPBF
Manufacturer:
VISHAY
Quantity:
3 553
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
V
GS
GS
= 25 °C, I
DS
T
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
G
= 25 °C, I
= - 160 V, V
MIN.
= 18 Ω, R
V
V
V
V
V
DD
-
-
-
f = 1.0 MHz, see fig. 5
DS
DS
DS
GS
TEST CONDITIONS
= - 100 V, I
= - 200 V, V
F
= V
= - 50 V, I
= 0 V, I
V
V
= - 3.9 A, dI/dt = 100 A/µs
V
GS
DS
I
S
D
GS
D
GS
= - 3.6 A, V
= - 3.9 A, V
GS
= 24 Ω, see fig. 10
, I
= ± 20 V
= - 25 V,
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 µA
= - 250 µA
D
I
D
D
= - 2.2 A
GS
= - 3.9 A,
= - 2.2 A
D
TYP.
= 0 V
= - 1 mA
GS
-
-
-
DS
J
G
G
= 125 °C
= 0 V
= - 160 V,
b
D
S
b
b
b
D
S
b
- 200
MIN.
- 2.0
1.1
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
S-82992-Rev. B, 12-Jan-09
Document Number: 91283
- 0.22
TYP.
0.97
340
110
150
8.8
7.3
4.5
7.5
33
27
19
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
- 100
- 500
- 4.0
- 3.6
- 6.3
S
- 14
300
1.5
3.3
2.0
20
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V

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