IL410-X008T Vishay, IL410-X008T Datasheet - Page 2

• Manufacturer Part Number: IL410-X008T
• Manufacturer: Vishay

Specifications of IL410-X008T

• Lead Free Status / RoHS Status: Supplier Unconfirmed

IL410, IL4108
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
Peak off-state voltage
RMS on-state current
Single cycle surge current
Total power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
Pollution degree (DIN VDE 0109)
Creepage distance
Clearance distance
Comparative tracking index per
DIN IEC112/VDE 0303 part 1, group IIIa
per DIN VDE 6110
Isolation resistance
Storage temperature range
Ambient temperature
Soldering temperature
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2)
For technical questions, contact:
Crossing, High dV/dt, Low Input Current
≥ 0.5 mm from case bottom
Optocoupler, Phototriac Output, Zero
V
V
max. ≤ 10 s dip soldering
IO
IO
(1)
TEST CONDITION
= 500 V, T
= 500 V, T
(T
amb
t = 1 s
= 25 °C, unless otherwise specified)
amb
amb
= 100 °C
= 25 °C
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IL4108
PART
IL410
SYMBOL
V
V
T
P
P
I
V
T
CTI
R
R
T
FSM
I
V
DRM
DRM
amb
I
diss
TM
diss
ISO
stg
sld
F
IO
IO
R
- 55 to + 150
- 55 to + 100
VALUE
≥ 10
≥ 10
≥ 175
5300
Document Number: 83627
1.33
100
600
800
300
500
260
2.5
6.6
≥ 7
≥ 7
60
6
3
2
12
11
Rev. 1.9, 29-Oct-10
mW/°C
mW/°C
UNIT
V
mW
mW
mm
mm
mA
mA
°C
°C
°C
RMS
Ω
Ω
V
A
V
V
A