LFXP15C-3FN256C LATTICE SEMICONDUCTOR, LFXP15C-3FN256C Datasheet - Page 25
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LFXP15C-3FN256C
Manufacturer Part Number
LFXP15C-3FN256C
Description
FPGA LatticeXP Family 15000 Cells 320MHz 130nm (CMOS) Technology 1.8V/2.5V/3.3V 256-Pin FBGA Tray
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet
1.LFXP3C-3QN208C.pdf
(130 pages)
Specifications of LFXP15C-3FN256C
Package
256FBGA
Family Name
LatticeXP
Device Logic Units
15000
Maximum Internal Frequency
320 MHz
Typical Operating Supply Voltage
1.8|2.5|3.3 V
Maximum Number Of User I/os
188
Ram Bits
331776
Re-programmability Support
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LFXP15C-3FN256C
Manufacturer:
Lattice Semiconductor Corporation
Quantity:
10 000
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Architecture
Lattice Semiconductor
LatticeXP Family Data Sheet
Polarity Control Logic
In a typical DDR Memory interface design, the phase relation between the incoming delayed DQS strobe and the
internal system Clock (during the READ cycle) is unknown.
The LatticeXP family contains dedicated circuits to transfer data between these domains. To prevent setup and
hold violations at the domain transfer between DQS (delayed) and the system Clock a clock polarity selector is
used. This changes the edge on which the data is registered in the synchronizing registers in the input register
block. This requires evaluation at the start of the each READ cycle for the correct clock polarity.
Prior to the READ operation in DDR memories DQS is in tristate (pulled by termination). The DDR memory device
drives DQS low at the start of the preamble state. A dedicated circuit detects this transition. This signal is used to
control the polarity of the clock to the synchronizing registers.
sysIO Buffer
Each I/O is associated with a flexible buffer referred to as a sysIO buffer. These buffers are arranged around the
periphery of the device in eight groups referred to as Banks. The sysIO buffers allow users to implement the wide
variety of standards that are found in today’s systems including LVCMOS, SSTL, HSTL, LVDS and LVPECL.
sysIO Buffer Banks
LatticeXP devices have eight sysIO buffer banks; each is capable of supporting multiple I/O standards. Each sysIO
bank has its own I/O supply voltage (V
), and two voltage references V
and V
resources allowing each
CCIO
REF1
REF2
bank to be completely independent from each other. Figure 2-28 shows the eight banks and their associated sup-
plies.
In the LatticeXP devices, single-ended output buffers and ratioed input buffers (LVTTL, LVCMOS, PCI and PCI-X) are
powered using V
. LVTTL, LVCMOS33, LVCMOS25 and LVCMOS12 can also be set as a fixed threshold input
CCIO
independent of V
In addition to the bank V
supplies, the LatticeXP devices have a V
core logic power sup-
CCIO.
CCIO
CC
ply, and a V
supply that power all differential and referenced buffers.
CCAUX
Each bank can support up to two separate VREF voltages, VREF1 and VREF2 that set the threshold for the refer-
enced input buffers. In the LatticeXP devices, a dedicated pin in a bank can be configured to be a reference voltage
supply pin. Each I/O is individually configurable based on the bank’s supply and reference voltages.
2-22
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