NB3L553DR2G ON Semiconductor, NB3L553DR2G Datasheet - Page 6
NB3L553DR2G
Manufacturer Part Number
NB3L553DR2G
Description
IC BUFFER 1:4 CLK 180MHZ 8-SOIC
Manufacturer
ON Semiconductor
Type
Fanout Buffer (Distribution)r
Datasheet
1.NB3L553MNR4G.pdf
(8 pages)
Specifications of NB3L553DR2G
Number Of Circuits
1
Ratio - Input:output
1:4
Differential - Input:output
No/No
Input
LVCMOS, LVTTL
Output
LVCMOS, LVTTL
Frequency - Max
200MHz
Voltage - Supply
2.38 V ~ 5.25 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Frequency-max
200MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NB3L553DR2GOSCT-ND
Manufacturer:
ON
Quantity:
220
NB3L553
Figure 2. Phase Noise Plot at 100 MHz at an Operating Voltage of 3.3 V, Room Temperature
The above plot captured using Agilent E5052A shows Additive Phase Noise of the NB3L553 device measured with an input
source generated by Agilent E8663B. The RMS phase jitter contributed by the device (integrated between 12 kHz to 20 MHz;
as shown in the shaded area) is 18 fs (RMS Phase Jitter of the input source is 75.40 fs and Output (DUT+Source) is 93.16 fs).
Figure 3. Phase Noise Plot at 100 MHz at an Operating Voltage of 5 V, Room Temperature
The above plot captured using Agilent E5052A shows Additive Phase Noise of the NB3L553 device measured with an input
source generated by Agilent E8663B. The RMS phase jitter contributed by the device (integrated between 12 kHz to 20 MHz;
as shown in the shaded area) is 29 fs (RMS Phase Jitter of the input source is 75.40 fs and Output (DUT+Source) is 103.85 fs).
http://onsemi.com
6