ADF4002BRUZ Analog Devices Inc, ADF4002BRUZ Datasheet - Page 5

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ADF4002BRUZ

Manufacturer Part Number
ADF4002BRUZ
Description
IC PLL FREQUENCY SYNTH 16-TSSOP
Manufacturer
Analog Devices Inc
Type
Clock/Frequency Synthesizer (RF), Phase Detectorr
Datasheet

Specifications of ADF4002BRUZ

Design Resources
Very Low Jitter Encode (Sampling) Clocks for High Speed Analog-to-Digital Converters Using ADF4002 (CN0003)
Pll
Yes
Input
CMOS
Output
Clock
Number Of Circuits
1
Ratio - Input:output
2:1
Differential - Input:output
Yes/No
Frequency - Max
400MHz
Divider/multiplier
Yes/No
Voltage - Supply
2.7 V ~ 3.3 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-TSSOP
Frequency-max
400MHz
Pll Type
Frequency Synthesis
Frequency
400MHz
Supply Current
5mA
Supply Voltage Range
2.7V To 3.3V
Digital Ic Case Style
TSSOP
No. Of Pins
16
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
EVAL-ADF4002EBZ1 - BOARD EVAL FOR ADF4002
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REFIN, RF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Lead Temperature, Soldering
Transistor Count
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
GND = AGND = DGND = 0 V.
P
P
A
Industrial (B Version)
Vapor Phase (60 sec)
Infrared (15 sec)
CMOS
Bipolar
to GND
to AV
DD
DD
= 25°C, unless otherwise noted.
to GND
to DV
DD
IN
DD
A, RF
1
IN
B to GND
Rating
−0.3 V to +3.6 V
−0.3 V to +0.3 V
−0.3 V to +5.8 V
−0.3 V to +5.8 V
−0.3 V to VDD + 0.3 V
−0.3 V to V
−0.3 V to VDD + 0.3 V
−40°C to +85°C
−65°C to +125°C
150°C
215°C
220°C
6425
303
P
+ 0.3 V
Rev. A | Page 5 of 20
This device is a high performance RF integrated circuit with an
ESD rating of <2 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
THERMAL CHARACTERISTICS
Table 4. Thermal Impedance
Package Type
TSSOP
LFCSP
ESD CAUTION
θ
150.4
122
JA
ADF4002
Unit
°C/W
°C/W

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