M48T59Y-70MH6E STMicroelectronics, M48T59Y-70MH6E Datasheet - Page 8
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M48T59Y-70MH6E
Manufacturer Part Number
M48T59Y-70MH6E
Description
IC TIMEKPR NVRAM 64KBIT 5V 28SOI
Manufacturer
STMicroelectronics
Series
Timekeeper®r
Type
Clock/Calendar/NVSRAMr
Datasheet
1.M48T59Y-70MH1E.pdf
(32 pages)
Specifications of M48T59Y-70MH6E
Memory Size
64K (8K x 8)
Time Format
HH:MM:SS (24 hr)
Date Format
YY-MM-DD-dd
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-SOIC, 28-SOH (8.48mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2861-5
M48T59Y-70MH6
M48T59Y-70MH6
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M48T59Y-70MH6E
Manufacturer:
ST
Quantity:
20 000
2
Note:
2.1
8/32
Operation modes
As
oscillator of the M48T59/Y/V are integrated on one silicon chip.
The two circuits are interconnected at the upper eight memory locations to provide user
accessible BYTEWIDE™ clock information in the bytes with addresses 1FF8h-1FFFh. The
clock locations contain the century, year, month, date, day, hour, minute, and second in 24
hour BCD format (except for the century). Corrections for 28, 29 (leap year - valid until
2100), 30, and 31 day months are made automatically. Byte 1FF8h is the clock control
register. This byte controls user access to the clock information and also stores the clock
calibration setting.
The eight clock bytes are not the actual clock counters themselves; they are memory
locations consisting of BiPORT™ READ/WRITE memory cells. The M48T59/Y/V includes a
clock control circuit which updates the clock bytes with current information once per second.
The information can be accessed by the user in the same manner as any other location in
the static memory array.
The M48T59/Y/V also has its own Power-fail Detect circuit. The control circuitry constantly
monitors the single 5V/3.3 V supply for an out of tolerance condition. When V
tolerance, the circuit write protects the SRAM, providing a high degree of data security in the
midst of unpredictable system operation brought on by low V
Battery Back-up Switchover Voltage (V
maintains data and clock operation until valid power returns.
Table 2.
1. See
X = V
Read mode
The M48T59/Y/V is in the READ Mode whenever W (WRITE Enable) is high and E (Chip
Enable) is low. The unique address specified by the 13 address inputs defines which one of
the 8,192 bytes of data is to be accessed. Valid data will be available at the Data I/O pins
within Address Access time (t
that the E and G access times are also satisfied. If the E and G access times are not met,
valid data will be available after the latter of the Chip Enable Access time (t
Enable Access time (t
Deselect
WRITE
READ
READ
Deselect
Deselect
Mode
Figure 4 on page 7
IH
Table 13 on page 24
or V
IL
V
Operating modes
; V
SO
SO
to V
4.75 to 5.5 V
4.5 to 5.5 V
3.0 to 3.6 V
= Battery back-up switchover voltage.
PFD
V
V
GLQV
or
or
SO
CC
shows, the static memory array and the quartz-controlled clock
for details.
(1)
(min)
).
(1)(1)
AVQV
) after the last address input signal is stable, providing
V
V
V
V
SO
E
X
X
IH
IL
IL
IL
), the control circuitry connects the battery which
V
V
G
X
X
X
X
IH
IL
V
V
V
W
X
X
X
IH
IH
IL
CC
DQ7-DQ0
. As V
High Z
High Z
High Z
High Z
D
D
OUT
IN
CC
falls below the
Battery back-up
CMOS standby
ELQV
CC
Standby
Power
Active
Active
Active
mode
) or Output
is out of