LM12H458CIVF/NOPB National Semiconductor, LM12H458CIVF/NOPB Datasheet - Page 8

• Manufacturer Part Number: LM12H458CIVF/NOPB
• Description: IC ACQUISITION SYS 12BIT 44-PLCC
• Manufacturer: National Semiconductor
• Type: Data Acquisition System (DAS)r

Specifications of LM12H458CIVF/NOPB

• Resolution (bits): 12 b
• Sampling Rate (per Second): 140k
• Data Interface: Parallel
• Voltage Supply Source: Analog and Digital
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LM12H458CIVF; *LM12H458CIVF/NOPB; LM12H458CIVF

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V
V
I
I
C
V
V
I
IN(1)
IN(0)
OUT
Symbol (See Figures
Digital Characteristics
The following specifications apply to the LM12454, LM12458, and LM12H458 for V
Boldface limits apply for T
IN(1)
IN(0)
OUT(1)
OUT(0)
Digital Timing Characteristics
The following specifications apply to the LM12454, LM12458, and LM12H458 for V
pF on data I/O, INT and DMARQ lines unless otherwise specified. Boldface limits apply for T
limits T
IN
Symbol
8, 9, 10)
A
1, 3
2, 4
= T
10
11
12
13
14
15
16
17
18
20
21
19
22
23
5
6
7
8
9
J
Logical “1” Input Voltage
Logical “0” Input Voltage
Logical “1” Input Current
Logical “0” Input Current
D0–D15 Input Capacitance
Logical “1” Output Voltage
Logical “0” Output Voltage
TRI-STATE
= 25˚C.
®
CS or Address Valid to ALE Low Set-Up
Time
CS or Address Valid to ALE Low Hold
Time
ALE Pulse Width
RD High to Next ALE High
ALE Low to RD Low
RD Pulse Width
RD High to Next RD or WR Low
ALE Low to WR Low
WR Pulse Width
WR High to Next ALE High
WR High to Next RD or WR Low
Data Valid to WR High Set-Up Time
Data Valid to WR High Hold Time
RD Low to Data Bus Out of TRI-STATE
RD High to TRI-STATE
RD Low to Data Valid (Access Time)
Address Valid or CS Low to RD Low
Address Valid or CS Low to WR Low
Address Invalid from RD or WR High
INT High from RD Low
DMARQ Low from RD Low
Output Leakage Current
Parameter
A
= T
J
= T
(Notes 6, 7)
MIN
Parameter
to T
MAX
(Notes 6, 7, 8)
; all other limits T
V
V
V
V
V
V
I
V
V
OUT
A
A
IN
IN
A
A
OUT
OUT
I
I
+ = V
+ = V
+ = V
+ = V
OUT
OUT
= 5V
= 0V
Conditions
= 1.6 mA
= 0V
= 5V
8
= −360 µA
= −10 µA
D
D
D
D
+ = 5.5V
+ = 4.5V
+ = 4.5V
+ = 4.5V
A
R
= T
Conditions
L
= 1 kΩ
J
= 25˚C.
A
A
(Note 10)
+ = V
Typical
+ = V
−0.005
0.005
−0.01
0.01
6
(Note 10)
Typical
D
D
+ = 5V, unless otherwise specified.
+ = 5V, t
40
30
30
30
30
A
= T
r
(Note 11)
J
= t
Limits
= T
−1.0
−3.0
4.25
(Note 11)
2.0
0.8
1.0
2.4
0.4
3.0
f
Limits
= 3 ns, and C
100
100
140
110
MIN
40
20
45
35
20
20
60
75
40
30
10
70
10
10
80
20
20
10
10
60
10
60
to T
MAX
µA (max)
µA (max)
µA (max)
µA (max)
V (max)
V (max)
V (min)
V (min)
V (min)
ns (max)
ns (max)
ns (max)
ns (max)
ns (max)
; all other
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
ns (min)
Units
L
Units
pF
= 100