AD5161BRMZ100 Analog Devices Inc, AD5161BRMZ100 Datasheet - Page 12

• Manufacturer Part Number: AD5161BRMZ100
• Description: IC DGTL POT SPI 100K 10-MSOP
• Manufacturer: Analog Devices Inc

Specifications of AD5161BRMZ100

• Temperature Coefficient: 45 ppm/°C Typical
• Taps: 256
• Resistance (ohms): 100K
• Number Of Circuits: 1
• Memory Type: Volatile
• Interface: I²C, SPI
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-MSOP, Micro10™, 10-uMAX, 10-uSOP
• Resistance In Ohms: 100K
• End To End Resistance: 100kohm
• No. Of Steps: 256
• Resistance Tolerance: ± 30%
• Supply Voltage Range: 2.7V To 5.5V
• Control Interface: Serial, I2C
• No. Of Pots: Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

AD5161
TEST CIRCUITS
Figure 28 to Figure 36 illustrate the test circuits that define the test conditions used in the product specification tables.
Figure 28. Test Circuit for Potentiometer Divider Nonlinearity Error (INL, DNL)
Figure 31. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
Figure 29. Test Circuit for Resistor Position Nonlinearity Error
V
V+
MS2
OFFSET
GND
Figure 30. Test Circuit for Wiper Resistance
V
DD
Figure 32. Test Circuit for Inverting Gain
V+
NO CONNECT
(Rheostat Operation; R-INL, R-DNL)
V
A
A
B
A
B
V
DUT
IN
W
W
A
B
DUT
A
A
DUT
B
W
OFFSET
BIAS
W
DUT
V
W
V
W
B
MS1
V
MS
PSRR (dB) = 20 LOG
PSS (%/%) =
V+ = V
I
W
OP279
= V
1LSB = V+/2
V+ = V
V
R
5V
V
MS
DD
DD
W
MS
= [V
/ R
DD
I
10%
W
NOMINAL
MS1
ΔV
ΔV
N
MS
DD
– V
V
%
%
OUT
MS2
(
ΔV
ΔV
]/I
MS
DD
W
)
Rev. A | Page 12 of 20
Figure 36. Test Circuit for Common-Mode Leakage current
OFFSET
Figure 35. Test Circuit for Incremental ON Resistance
GND
OFFSET
Figure 33. Test Circuit for Noninverting Gain
Figure 34. Test Circuit for Gain vs. Frequency
V
GND
V
V
DD
SS
IN
2.5V
DUT
GND
DUT
B
V
W
IN
DUT
OFFSET
BIAS
NC
A
NC
A
B
I
B
A
SW
DUT
W
NC = NO CONNECT
V
SS
CODE = 0x00
W
R
SW
W
TO V
B
=
OP279
0.1V
DD
I
I
SW
5V
CM
AD8610
–15V
+15V
0.1V
V
V
OUT
CM
V
OUT