DS90LV017ATMX/HAPB National Semiconductor, DS90LV017ATMX/HAPB Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/469/national_semiconductor_sml.jpg)
DS90LV017ATMX/HAPB
Manufacturer Part Number
DS90LV017ATMX/HAPB
Description
Manufacturer
National Semiconductor
Datasheet
1.DS90LV017ATMXHAPB.pdf
(8 pages)
Specifications of DS90LV017ATMX/HAPB
Number Of Elements
1
Number Of Receivers
1
Number Of Drivers
1
Input Type
CMOS/TTL
Operating Supply Voltage (typ)
3.3V
Differential Output Voltage
450mV
Power Dissipation
1.19W
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant
www.national.com
DIFFERENTIAL DRIVER CHARACTERISTICS
V
∆V
V
V
V
∆V
I
I
V
V
I
I
V
I
DIFFERENTIAL DRIVER CHARACTERISTICS
t
t
t
t
t
t
t
f
Symbol
OXD
OSD
IH
IL
CC
PHLD
PLHD
SKD1
SKD3
SKD4
TLH
THL
MAX
Symbol
OD
OH
OL
OS
IH
IL
CL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified. (Notes 2, 3, 7)
Switching Characteristics
Over Supply Voltage and Operating Temperature Ranges, unless otherwise specified. (Notes 3, 4, 5, 6)
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
Note 3: All typicals are given for: V
Note 4: These parameters are guaranteed by design. The limits are based on statistical analysis of the device performance over PVT (process, voltage,
temperature) ranges.
Note 5: C
Supply Voltage (V
Input Voltage (DI)
Output Voltage (DO
Maximum Package Power Dissipation
Storage Temperature Range
Lead Temperature Range Soldering
OD
OS
M Package
Derate M Package
(4 sec.)
L
includes probe and fixture capacitance.
Output Differential Voltage
V
Output High Voltage
Output Low Voltage
Offset Voltage
Offset Magnitude Change
Power-off Leakage
Output Short Circuit Current
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input Clamp Voltage
Power Supply Current
Differential Propagation Delay High to Low
Differential Propagation Delay Low to High
Differential Pulse Skew |t
Differential Part to Part Skew (Note 9)
Differential Part to Part Skew (Note 10)
Transition Low to High Time
Transition High to Low Time
Maximum Operating Frequency (Note 11)
OD
Magnitude Change
CC
±
Parameter
)
)
CC
Parameter
= +3.3V and T
9.5 mW/˚C above +25˚C
PHLD
@
− t
−65˚C to +150˚C
+25˚C
A
−0.3V to +3.6V
−0.3V to +3.9V
PLHD
= +25˚C.
R
(Figure 1)
V
V
V
I
No Load
R
−0.3V to +4V
CL
OUT
IN
IN
L
L
(Note 1)
= 100Ω
= 100Ω
| (Note 8)
= −18 mA
1190 mW
= 3.3V or 2.4V
= GND or 0.5V
+260˚C
= V
CC
Conditions
or GND, V
V
2
IN
R
(Figure 2 and Figure 3)
L
= V
= 100Ω, C
Recommended Operating
Conditions
Supply Voltage (V
Temperature (T
ESD Ratings
CC
CC
(HBM 1.5 kΩ, 100 pF)
(EIAJ 0 Ω, 200 pF)
(CDM)
(IEC direct 330 Ω, 150 pF)
Conditions
= 0V
or GND
L
= 15 pF
A
)
DO+,
DO−
V
CC
Pin
DI
CC
)
Min
0.3
0.3
0.2
0.2
1.125
GND
−1.5
0
0
0
Min
250
0.9
2.0
Min
−40
3.0
0
Typ
Typ
350
0.8
1.1
0.3
0.5
0.5
3.3
−5.7
−0.6
25
Typ
355
1.4
1.1
1.2
±
±
±
1
3
5
7
1
2
1
Max
+85
3.6
1.375
Max
Max
1.5
1.5
0.7
1.0
1.2
1.0
1.0
V
450
±
±
±
1.6
0.8
35
25
−8
10
8
10
CC
10
10
≥ 1000V
≥ 1000V
Units
≥ 8kV
≥ 4kV
OD
˚C
V
Units
Units
MHz
.
mV
mV
mV
mA
mA
mA
µA
µA
µA
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V
V