DS90LV017ATMX/HAPB National Semiconductor, DS90LV017ATMX/HAPB Datasheet - Page 3
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DS90LV017ATMX/HAPB
Manufacturer Part Number
DS90LV017ATMX/HAPB
Description
Manufacturer
National Semiconductor
Datasheet
1.DS90LV017ATMXHAPB.pdf
(8 pages)
Specifications of DS90LV017ATMX/HAPB
Number Of Elements
1
Number Of Receivers
1
Number Of Drivers
1
Input Type
CMOS/TTL
Operating Supply Voltage (typ)
3.3V
Differential Output Voltage
450mV
Power Dissipation
1.19W
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant
Switching Characteristics
Note 6: Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z
Note 7: The DS90LV017A is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs.
Note 8: t
the same channel.
Note 9: t
specification applies to devices at the same V
Note 10: t
operating temperature and voltage ranges, and across process distribution. t
Note 11: f
Parameter Measurement Information
SKD1
SKD3
MAX
SKD4
, |t
, Differential Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This
generator input conditions: t
, part to part skew, is the differential channel to channel skew of any event between devices. This specification applies to devices over recommended
PHLD
− t
PLHD
FIGURE 2. Differential Driver Propagation Delay and Transition Time Test Circuit
FIGURE 3. Differential Driver Propagation Delay and Transition Time Waveforms
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
r
= t
CC
f
<
and within 5˚C of each other within the operating temperature range.
FIGURE 1. Differential Driver DC Test Circuit
1 ns (0% to 100%), 50% duty cycle, 0V to 3V. Output criteria: duty cycle = 45%/55%, V
(Continued)
SKD4
3
is defined as |Max − Min| differential propagation delay.
O
= 50Ω, t
r
≤ 1 ns, t
f
10010104
≤ 1 ns (10%-90%).
10010105
10010103
OD
>
250mV.
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