DS90LV017ATMX/HAPB National Semiconductor, DS90LV017ATMX/HAPB Datasheet - Page 3

• Manufacturer Part Number: DS90LV017ATMX/HAPB
• Manufacturer: National Semiconductor

Specifications of DS90LV017ATMX/HAPB

• Number Of Elements: 1
• Number Of Receivers: 1
• Number Of Drivers: 1
• Input Type: CMOS/TTL
• Operating Supply Voltage (typ): 3.3V
• Differential Output Voltage: 450mV
• Power Dissipation: 1.19W
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Switching Characteristics
Note 6: Generator waveform for all tests unless otherwise specified: f = 1 MHz, Z
Note 7: The DS90LV017A is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs.
Note 8: t
the same channel.
Note 9: t
specification applies to devices at the same V
Note 10: t
operating temperature and voltage ranges, and across process distribution. t
Note 11: f
Parameter Measurement Information
SKD1
SKD3
MAX
SKD4
, |t
, Differential Part to Part Skew, is defined as the difference between the minimum and maximum specified differential propagation delays. This
generator input conditions: t
, part to part skew, is the differential channel to channel skew of any event between devices. This specification applies to devices over recommended
PHLD
− t
PLHD
FIGURE 2. Differential Driver Propagation Delay and Transition Time Test Circuit
FIGURE 3. Differential Driver Propagation Delay and Transition Time Waveforms
|, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of
r
= t
CC
f
<
and within 5˚C of each other within the operating temperature range.
FIGURE 1. Differential Driver DC Test Circuit
1 ns (0% to 100%), 50% duty cycle, 0V to 3V. Output criteria: duty cycle = 45%/55%, V
(Continued)
SKD4
3
is defined as |Max − Min| differential propagation delay.
O
= 50Ω, t
r
≤ 1 ns, t
f
10010104
≤ 1 ns (10%-90%).
10010105
10010103
OD
>
250mV.
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