MT46V16M16P-6T:K TR Micron Technology Inc, MT46V16M16P-6T:K TR Datasheet - Page 80

• Manufacturer Part Number: MT46V16M16P-6T:K TR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16P-6T:K TR

• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 220mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 43:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Interrupting
Notes:
Bank a,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. DI b = data-in for column b; DO n = data-out for column n.
2. An interrupted burst of 4 is shown; two data elements are written.
3. One subsequent element of data-in is applied in the programmed order following DI b.
4.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T2 and T2n (nominal case) to register DM.
7. If the burst of 8 is used, DM and DQS are required at T3 and T3n because the READ com-
t
mand will not mask these two data elements.
DI
WTR is referenced from the first positive CK edge after the last data-in pair.
b
NOP
T1
DI
b
DI
b
T1n
NOP
T2
t
WTR
T2n
78
Bank a,
READ
Col n
T3
T3n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
CL = 2
CL = 2
T4
NOP
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
T5
NOP
DO
DO
DO
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n
n
n
T5n
T6
NOP
Operations
Don’t Care
T6n