MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet

DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray

MT46V16M16P-5B:K

Manufacturer Part Number
MT46V16M16P-5B:K
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V16M16P-5B:K

Density
256 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
260mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant

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MICRON
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MICRON
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Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
7 072
Double Data Rate (DDR) SDRAM
MT46V64M4 – 16 Meg x 4 x 4 banks
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
• V
• Bidirectional data strobe (DQS) transmitted/
• Internal, pipelined double-data-rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
• Self refresh (not available on AT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
architecture; two data accesses per clock cycle
aligned with data for WRITEs
(x16 has two – one per byte)
– 64ms, 8192-cycle(Commercial & Industrial)
– 16ms, 8192-cycle (Automotive)
t
RAS lockout supported (
DD
DD
= +2.5V ±0.2V, V
= +2.6V ±0.1V, V
Products and specifications discussed herein are subject to change by Micron without notice.
DD
DD
Q = +2.5V ±0.2V
Q = +2.6V ±0.1V (DDR400)
t
RAP =
t
RCD)
1
Notes: 1. Only available on Revision F and G.
Options
• Configuration
• Plastic package – OCPL
• Plastic package
• Timing – cycle time
• Self refresh
• Temperature rating
• Revision
– 64 Meg x 4 (16 Meg x 4 x 4 banks)
– 32 Meg x 8 (8 Meg x 8 x 4 banks)
– 16 Meg x 16 (4 Meg x 16 x 4 banks)
– 66-pin TSOP
– 66-pin TSOP (Pb-free)
– 60-ball FBGA (8mm x 14mm)
– 60-ball FBGA (8mm x 14mm) (Pb-free)
– 60-ball FBGA (8mm x 12.5mm)
– 60-ball FBGA (8mm x 12.5mm)
– 5ns @ CL = 3 (DDR400B)
– 6ns @ CL = 2.5 (DDR333) FBGA only
– 6ns @ CL = 2.5 (DDR333) TSOP only
– 7.5ns @ CL = 2 (DDR266)
– 7.5ns @ CL = 2 (DDR266A)
– 7.5ns @ CL = 2.5 (DDR266B)
– Standard
– Low-power self refresh
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
– Automotive (–40°C to +105°C)
– x4, x8
– x16
– x4, x8, x16
(Pb-free)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Only available on Revision K.
3. Not recommended for new designs.
4. Contact Micron for availability.
256Mb: x4, x8, x16 DDR SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Marking
Features
16M16
64M4
32M8
-75E
-75Z
None
None
BG
-75
FG
CV
CY
-5B
-6T
AT
TG
:G
:F
IT
-6
:K
P
L
3
3
4
2
1
1
2
1
1
1

Related parts for MT46V16M16P-5B:K

MT46V16M16P-5B:K Summary of contents

Page 1

... Notes: 1. Only available on Revision F and G. Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 256Mb: x4, x8, x16 DDR SDRAM 2. Only available on Revision K. 3. Not recommended for new designs. 4. Contact Micron for availability. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 2

... Yes Yes Yes – Yes – – – – -6/-6T -75E Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 256Mb: x4, x8, x16 DDR SDRAM 1.6ns ±0.70ns 2.1ns ±0.70ns 2.0ns ±0.70ns 2.5ns ±0.75ns 2.5ns ±0.75ns 32 Meg Meg Meg banks ...

Page 3

... TSOP TG 400-mil TSOP (Pb-free) P 8mm x 14mm FBGA FG 8mm x 14mm FBGA (Pb-free) BG 8mm x 12.5mm FBGA CV CY 8mm x 12.5mm FBGA (Pb-free) -5B -6T -75E -75Z -75 3 256Mb: x4, x8, x16 DDR SDRAM : Sp. Op. Temp. Revision Revision x16 :F x4 x4, x8, x16 :K Operating Temp. Commercial IT Industrial AT Automotive ...

Page 4

... SELF REFRESH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90 Power-down (CKE Not Active .92 PDF: 09005aef80768abb/Source: 09005aef82a95a3a 256Mb_DDRTOC.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ©2003 Micron Technology, Inc. All rights reserved. Table of Contents ...

Page 5

... BST = BURST TERMINATE CKEH = Exit power-down CKEL = Enter power-down EMR = Extended mode register LMR = LOAD MODE REGISTER MR = Mode register Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 256Mb: x4, x8, x16 DDR SDRAM State Diagram Self refresh REFS REFSX Idle REFA ...

Page 6

... READ or WRITE command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable READ or WRITE burst lengths locations. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access ...

Page 7

... Ambient and case temperatures cannot be less than –40°C or greater than +105°C PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Functional Description Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 8

... Functional Block Diagrams The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits internally configured as a 4-bank DRAM. Figure 3: 64 Meg x 4 Functional Block Diagram CKE CK# CK Control CS# logic WE# CAS# RAS# Refresh 13 counter Mode registers 15 13 A0–A12, Address ...

Page 9

... BANK CONTROL LOGIC 2 256 (x32) COLUMN DECODER COLUMN- 8 ADDRESS 9 COUNTER/ LATCH 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 256Mb: x4, x8, x16 DDR SDRAM Functional Block Diagrams CK DLL DATA READ MUX LATCH 8 DRVRS 1 DQS GENERATOR COL0 DQS INPUT ...

Page 10

... NC LDM 20 WE# WE# 21 CAS# CAS# 22 RAS# RAS# 23 CS# CS BA0 BA0 26 BA1 BA1 27 A10/AP A10/ Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 256Mb: x4, x8, x16 DDR SDRAM x16 DQ15 DQ7 DQ14 DQ6 DQ3 62 DQ13 DQ12 NC 60 DQ5 ...

Page 11

... UDM LDM CK# WE# CAS# G A12 CKE CS# RAS# H A11 A9 BA1 BA0 A10 Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 256Mb: x4, x8, x16 DDR SDRAM DNU DNU DQ1 DQ3 DQ5 DQ7 DNU ©2003 Micron Technology, Inc. All rights reserved. ...

Page 12

... DQ3–DQ5 B3, A2 62, 65 DQ6, DQ7 PDF: 09005aef80768abb/Source: 09005aef82a95a3a 256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Pin and Ball Assignments and Descriptions Type Description Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/ WRITE commands, to select one location out of the memory array in the respective bank ...

Page 13

... Do not use: Must float to minimize noise on V Type Description Input Address input A13 for 1Gb devices. 13 256Mb: x4, x8, x16 DDR SDRAM REF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. . ...

Page 14

... MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 256Mb: x4, x8, x16 DDR SDRAM Package Dimensions GAGE PLANE +0.10 –0.05 DETAIL A ©2003 Micron Technology, Inc. All rights reserved. 0.25 0.80 TYP ...

Page 15

... DDR: Rev. O, Core DDR: Rev 0.85 ±0.1 8 ±0.15 Ball ±0. 0.8 TYP 6.4 CTR 15 256Mb: x4, x8, x16 DDR SDRAM Package Dimensions Ball A1 ID 1.2 MAX 0.25 MIN Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 16

... Ball 12.5 ±0. 0.8 TYP 6.4 CTR 8 ±0.15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 256Mb: x4, x8, x16 DDR SDRAM Package Dimensions Ball A1 ID 1.20 MAX 0.25 MIN ©2003 Micron Technology, Inc. All rights reserved. ...

Page 17

... I REFC = RFC (MIN REFC =7.8µ Standard DD I Low power ( (MIN); Address and 17 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – +2.5V ±0.2V (-6, -6T, -75E, -7Z, -75); DD -5B -6/6T -75E -75Z -75 135 125 125 120 120 170 170 160 145 145 ...

Page 18

... OUT REFC = RFC (MIN REFC = 7.8µ Standard Low power ( (MIN); Address and 18 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – +2.5V ±0.2V (-6, -6T, -75E, -7Z, -75); DD -5B -6/6T -75E -75Z -75 135 125 125 120 120 185 180 170 155 155 ...

Page 19

... RFC (MIN) t REFC = 7.8µs t REFC = 1.95µs (AT) Standard Low power ( minimum RC allowed; Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – +2.5V ±0.2V (-6, -6T); DD Symbol -5B -6/6T Units I 0 100 90 DD ...

Page 20

... I OUT OL , REF ) OHR OUT ) OLR OUT , REF ) 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC Min Max –1V +3.6V –1V +3.6V –1V +3.6V –0. 0.5V DD –55 +150 – +2.6V ±0.1V Min Max Units +2.5 +2.7 +2.5 +2.7 0.49 × 0.51 × V ...

Page 21

... I OLR OUT , REF ) +2.5V ±0.2V +2.5V ±0. Symbol REF AC 19 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and +2.5V ±0.2V Min Max Units +2.3 +2.7 +2.3 +2.7 0.49 × 0.51 × 0. 0.04 REF REF 0.3 REF DD –0 0.15 REF – ...

Page 22

... V TT 25Ω Reference 25Ω point Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC Receiver ©2003 Micron Technology, Inc. All rights reserved ...

Page 23

... DD Symbol 0.5 × MIN when static and is centered around 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and +2.6V ±0.1V +2.6V ±0.1V for -5B Min Max Units 1.15 1.35 –0 0 0 0.2 0.5 × 0 Maximum clock level ...

Page 24

... Delta input capacitance: CK, CK# Input/output capacitance: DQ, LDQS, UDQS, LDM, UDM Input capacitance: Command and address Input capacitance: CK, CK# Input capacitance: CKE PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC Symbol Min DC – – ...

Page 25

... QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI t RFC RPRE t RPST t RRD t VTD t WPRE t WPRES t WPST 23 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -5B Min Max Units –0.70 +0. 0. 0.45 0.55 CK 0.40 – ns 1.75 – ns –0.60 +0. 0.35 – ...

Page 26

... Data valid output window PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev +2.6V ±0.1V +2.6V ±0.1V DD Symbol WTR t XSNR t XSRD n/a 24 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -5B Min Max Units 15 – – – 200 – ...

Page 27

... QH t QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI t RFC RPRE t RPST t RRD t VTD t WPRE 25 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -6 (FBGA) Min Max Units –0.70 +0. 0. 0.45 0.55 CK 0.45 – ns 1.75 – ns –0.6 +0 0.35 – ...

Page 28

... Data valid output window PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev +2.5V ±0.2V +2.5V ±0.2V DD Symbol t WPRES t WPST WTR t XSNR t XSRD n/a 26 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -6 (FBGA) Min Max Units 0 – 0.4 0 – – – ...

Page 29

... QH t QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI t RFC RPRE t RPST t RRD t VTD t WPRE 27 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -6T (TSOP) Min Max Units –0.70 +0. 0. 0.45 0.55 CK 0.45 – ns 1.75 – ns –0.6 +0 0.35 – ...

Page 30

... Data valid output window PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev +2.5V ±0.2V +2.5V ±0.2V DD Symbol t WPRES t WPST WTR t XSNR t XSRD n/a 28 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -6T (TSOP) Min Max Units 0 – 0.4 0 – – – ...

Page 31

... QH t QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI t RFC RPRE t RPST t RRD t VTD t WPRE 29 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75E Min Max Units –0.75 +0. 0.45 0. 0.45 0.55 CK 0.5 – ns 1.75 – ns –0.75 +0. 0.35 – ...

Page 32

... Data valid output window PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev +2.5V ±0.2V +2.5V ±0.2V DD Symbol t WPRES t WPST WTR t XSNR t XSRD n/a 30 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75E Min Max Units 0 – 0.4 0 – – – ...

Page 33

... QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI t RFC RPRE t RPST t RRD t VTD t WPRE t WPRES 31 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75Z Min Max Units –0.75 +0. 0.45 0. 0.45 0.55 CK 0.5 – ns 1.75 – ns –0.75 +0. 0.35 – ...

Page 34

... Data valid output window PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev +2.5V ±0.2V +2.5V ±0.2V DD Symbol t WPST WTR t XSNR t XSRD n/a 32 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75Z Min Max Units t 0.4 0 – – – ...

Page 35

... QH t QHS t RAP t RAS RCD t REFC t REFC t REFI t REFI RPRE t RPST t RRD t VTD t WPRE t WPRES 33 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75 Min Max Units –0.75 +0. 0.45 0. 0.45 0.55 CK 0.5 – ns 1.75 – ns –0.75 +0. 0.35 – ...

Page 36

... Symbol tWPST tWR t WTR t XSNR t XSRD n +2.5V ±0.2V +2.5V ±0. 1.00 1.05 1. +2.5V ±0.2V +2.5V ±0. 0.50 0.55 0.60 34 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -75 Min Max Units 0.4 0.6 tCK 15 – – – 200 – DQSQ ...

Page 37

... Specified values are obtained specifications are tested after the device is properly initialized and is averaged at = +2.5V ±0.2V 25° OUT 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC -to-V swing 1.5V in the test environ- IH (or to the crossing point for CK/CK#), REF ( ) and ...

Page 38

... However, an AUTO REFRESH command must be asserted at least once every 70.3µs(commerial and industrial) or 17.55µs (automotive); burst refreshing or posting by the DRAM controller greater than 8 REFRESH cycles is not allowed. 25. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any given device ...

Page 39

... V-I curve of Figure 13 on page 38. limits, is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure 13 on page 38. 37 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC - 7.5ns -75E / - 7.5ns - 6ns ...

Page 40

... V-I curve of Figure 15 on page 39. and voltage will lie within the outer bounding lines of the V-I curve of Figure 16. 38 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC 2.0 2.5 2 ...

Page 41

... V Q must track each other DQSCK (MAX DQSCK (MIN) + RPRE (MAX) condition. 39 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC 2.0 2.5 2.0 2.5 level and the referenced test DD pulse width ≤ 3ns, and the pulse t RPST (MAX) condition. ...

Page 42

... Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset followed by 200 clock cycles before any READ command. 53. This is the DC voltage supplied at the DRAM and is inclusive of all noise MHz. Any noise above 20 MHz at the DRAM generated from any source other than that of the DRAM itself may not exceed the DC voltage range of 2.6V ± ...

Page 43

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC Nominal Min Max Low 4.6 9.6 –6.1 9.2 18.2 –12.2 13.8 26.0 – ...

Page 44

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM Electrical Specifications – DC and AC Nominal Min Max Low 2.6 5.0 –3.5 5.2 9.9 –6.9 7.8 14.6 – ...

Page 45

... Table 29: Truth Table 2 – DM Operation Used to mask write data, provided coincident with the corresponding data Name (Function) Write enable Write inhibit PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM CS# RAS# CAS# WE ...

Page 46

... RCD is met, the bank will be in the “row active” state. auto precharge enabled and ends when will be in the idle state. auto precharge enabled and ends when will be in the idle state. 44 256Mb: x4, x8, x16 DDR SDRAM is HIGH (see Table 33 on page 47) and has been met. t RCD has been met ...

Page 47

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev met. Once RFC is met, the DDR SDRAM will be in the all banks idle state MRD has been met. Once MRD is met, the DDR SDRAM will be in the all banks idle state ...

Page 48

... The minimum delay from a READ or WRITE command with auto precharge enabled command to a different bank is summarized in Table 32. To Command PRECHARGE ACTIVE PRECHARGE ACTIVE 46 256Mb: x4, x8, x16 DDR SDRAM t RP has been met. t RCD has been met. No data t WR ends, with t RP) begins. This device supports ...

Page 49

... H Notes: 1. CKE clock edge. 2. Current state is the state of the DDR SDRAM immediately prior to clock edge n. 3. COMMAND MAND 4. All states and sequences not shown are illegal or reserved. 5. CKE must not drop LOW during a column access. For a READ, this means CKE must stay ...

Page 50

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN HIGH Row Bank Don’t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. 48 256Mb: x4, x8, x16 DDR SDRAM Commands ©2003 Micron Technology, Inc. All rights reserved. ...

Page 51

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN HIGH Col EN AP DIS AP Bank Don’t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. 49 256Mb: x4, x8, x16 DDR SDRAM Commands ©2003 Micron Technology, Inc. All rights reserved. ...

Page 52

... Ai is the most significant column address bit for a given density ( HIGH Col EN AP DIS AP Bank Don’t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. 50 256Mb: x4, x8, x16 DDR SDRAM Commands ©2003 Micron Technology, Inc. All rights reserved. ...

Page 53

... All banks must be idle before an AUTO REFRESH command is issued. SELF REFRESH The SELF REFRESH command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered down. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is disabled (LOW). ...

Page 54

... DLL bit (set LMR command is issued, the same operating parameters should be utilized as in step 11. 20. Wait at least 21. At this point the DRAM is ready for any valid command. At least 200 clock cycles with CKE HIGH are required between step 11 (DLL RESET) and any READ command. PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2 ...

Page 55

... Issue AUTO REFRESH command Assert NOP or DESELECT for t RFC time Optional LMR command to clear DLL bit Assert NOP or DESELECT for t MRD time DRAM is ready for any valid command Micron Technology, Inc., reserves the right to change products or specifications without notice. 53 256Mb: x4, x8, x16 DDR SDRAM Operations © ...

Page 56

... V , and V + 0.3V. Alternatively, V REF are 0V, provided a minimum of 42Ω of series resistance is used between DD DD supply and the input pin. Once initialized 256Mb: x4, x8, x16 DDR SDRAM Tc0 Td0 Te0 ( ( ( ( ( ( ) ) ) ) ...

Page 57

... REGISTER DEFINITION Mode Register The mode register is used to define the specific DDR SDRAM mode of operation. This definition includes the selection of a burst length, a burst type, a CAS latency, and an operating mode, as shown in Figure 23. The mode register is programmed via the LMR command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is programmed again or until the device loses power (except for bit A8, which is self- clearing) ...

Page 58

... Burst Length (BL) Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable for both READ and WRITE bursts, as shown in Figure 23 on page 55. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command locations are available for both the sequential and the interleaved burst types ...

Page 59

... NOP READ NOP NOP READ NOP NOP Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. 57 256Mb: x4, x8, x16 DDR SDRAM Operations T2n T3 T3n NOP T2n T3 T3n NOP T3 T3n NOP Don’t Care AC, DQSCK, and DQSQ. ...

Page 60

... DDR SDRAM 133 ≤ f ≤ 200 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 61

... RCD specification. t RCD specification of 20ns with a 133 MHz clock (7.5ns period ≤ 3 (Figure 26 also shows the same case for RCD (MIN)/ 59 256Mb: x4, x8, x16 DDR SDRAM Address bus Extended mode DS DLL register (Ex) DLL E0 0 Enable ...

Page 62

... CK and CK#). Figure 27 on page 62 shows the general timing for each possible CL setting. DQS is driven by the DDR SDRAM along with output data. The initial LOW state on DQS is known as the read preamble; the LOW state coincident with the last data-out element is known as the read postamble ...

Page 63

... RP have been met. Part of the row precharge time is hidden during the access of the last data elements. PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM t DQSS (NOM) case is shown; the t DQSS [MIN] and Micron Technology, Inc ...

Page 64

... NOP NOP NOP AC, DQSCK, and DQSQ. Micron Technology, Inc., reserves the right to change products or specifications without notice. 62 256Mb: x4, x8, x16 DDR SDRAM Operations T3n T4 T5 NOP NOP T3n T4 T5 NOP NOP T3n T4 T4n T5 NOP NOP Transitioning Data Don’t Care ...

Page 65

... Bank, Col 2 NOP READ NOP Bank, Col AC, DQSCK, and DQSQ. Micron Technology, Inc., reserves the right to change products or specifications without notice. 63 256Mb: x4, x8, x16 DDR SDRAM Operations T3n T4 T4n T5 T5n NOP NOP DO b T3n T4 T4n T5 T5n NOP NOP DO b T3n T4 T4n T5 ...

Page 66

... Bank, Col 2 NOP NOP READ Bank, Col AC, DQSCK, and Micron Technology, Inc., reserves the right to change products or specifications without notice. 64 256Mb: x4, x8, x16 DDR SDRAM T3n T4 T5 T5n NOP NOP DO b T3n T4 T5 T5n NOP NOP DO T3n T4 T4n T5 NOP NOP Transitioning Data Don’ ...

Page 67

... Col x Col b Col 2 READ READ READ Bank, Bank, Bank, Col x Col b Col AC, DQSCK, and DQSQ. Micron Technology, Inc., reserves the right to change products or specifications without notice. 65 256Mb: x4, x8, x16 DDR SDRAM Operations T4 T4n T5 T5n NOP NOP T3n T4 T4n T5 T5n NOP NOP ...

Page 68

... BST 1 NOP NOP AC, DQSCK, and DQSQ. Micron Technology, Inc., reserves the right to change products or specifications without notice. 66 256Mb: x4, x8, x16 DDR SDRAM Operations T4 T5 NOP NOP T4 T5 NOP NOP T3n T4 T5 NOP NOP Transitioning Data Don’t Care ©2003 Micron Technology, Inc. All rights reserved. ...

Page 69

... NOP BST BST NOP NOP AC, DQSCK, and DQSQ. Micron Technology, Inc., reserves the right to change products or specifications without notice. 67 256Mb: x4, x8, x16 DDR SDRAM Operations T4 T4n T5 T5n NOP NOP DI b T3n T4 T5 T5n WRITE NOP Bank, Col b t DQSS (NOM ...

Page 70

... RAS (MIN) is met, a READ command with auto precharge enabled would cause AC, DQSCK, and DQSQ. t RAS (MIN) is met. Micron Technology, Inc., reserves the right to change products or specifications without notice. 68 256Mb: x4, x8, x16 DDR SDRAM Operations T3n T4 T5 NOP ACT Bank a, Row t RP T3n ...

Page 71

... NOP READ NOP Col Bank RCD t RAS RPRE t LZ (MIN (MIN) Micron Technology, Inc., reserves the right to change products or specifications without notice. 69 256Mb: x4, x8, x16 DDR SDRAM T5 T5n T6 T6n PRE NOP NOP All banks One bank 5 Bank DQSCK (MIN) RPST (MIN) ...

Page 72

... DQS DQ (last data valid (last data valid) 6 Earliest signal transition Latest signal transition clock transition collectively when a bank is active HP QHS. 70 256Mb: x4, x8, x16 DDR SDRAM T2 T2n T3 T3n DQSQ 2 t DQSQ T2n T3 T2 T2n T3 T2 T2n T3 Data Data Data valid valid valid ...

Page 73

... Data valid window window t DQSQ 2 t DQSQ Data valid window clock transition collectively when a bank is active HP QHS. 71 256Mb: x4, x8, x16 DDR SDRAM T3 T3n DQSQ 2 t DQSQ T2n T3 T3n T2n T3 T3n T2n T3 T3n Data valid Data valid window window t DQSQ 2 t DQSQ 2 ...

Page 74

... DQSQ after DQS transitions, regardless (MIN) are the first valid signal transitions (MAX) are the latest valid signal transitions DQSS [MIN] and DQSS [MAX]) might not be intuitive; they have also been 72 256Mb: x4, x8, x16 DDR SDRAM T3 T3n T4 T4n T5 t DQSCK 2 (MAX) t DQSCK 2 (MIN) T3 T3n ...

Page 75

... DM, as shown in Figures 46 and 47. After the PRECHARGE command, a subsequent command to the same bank cannot be issued until PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN 256Mb: x4, x8, x16 DDR SDRAM t WTR should be met, as shown in Figure period are written to the internal array; any subsequent data-in Micron Technology, Inc ...

Page 76

... Bank a, Col b t DQSS DQS DQSS DQS DQSS DQS Transitioning Data 74 256Mb: x4, x8, x16 DDR SDRAM T2 T2n T3 NOP NOP Don’t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. Operations ...

Page 77

... DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n NOP WRITE Bank, Col n t DQSS 256Mb: x4, x8, x16 DDR SDRAM T3 T3n T4 T4n T5 NOP NOP NOP DI n Transitioning Data Don’t Care Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 78

... Bank, Col b t DQSS DQS T1n WRITE WRITE WRITE Bank, Bank, Bank, Col b Col x t DQSS (NOM 256Mb: x4, x8, x16 DDR SDRAM T2 T2n T3 T4 NOP WRITE NOP Bank, Col Transitioning Data T2 T2n T3 T3n T4 T4n WRITE WRITE Bank, Bank, Col n Col a Col g ...

Page 79

... T1n T2 T2n T3 NOP NOP NOP t WTR 256Mb: x4, x8, x16 DDR SDRAM T4 T5 READ NOP Bank a, Col Transitioning Data t WTR is not required, and the READ Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 80

... DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n T3 NOP NOP READ t WTR Bank a, Col 256Mb: x4, x8, x16 DDR SDRAM T3n T4 T5 T5n NOP NOP Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 81

... PDF: 09005aef80768abb/Source: 09005aef82a95a3a DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n T3 NOP NOP READ t WTR Bank a, Col 256Mb: x4, x8, x16 DDR SDRAM T5n T3n T4 T5 NOP NOP Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 82

... DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n T3 NOP NOP NOP 256Mb: x4, x8, x16 DDR SDRAM T4 T5 PRE NOP Bank all) Transitioning Data not required, and Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 83

... DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n T3 NOP NOP NOP 256Mb: x4, x8, x16 DDR SDRAM T3n T4 T4n T5 NOP PRE t RP Bank all) Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. Operations T6 NOP Don’ ...

Page 84

... DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev T1n T2 T2n T3 NOP NOP NOP 256Mb: x4, x8, x16 DDR SDRAM T3n T4 T4n T5 PRE NOP t RP Bank all) Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. Operations T6 NOP Don’ ...

Page 85

... Bank x t RCD t RAS t DQSS (NOM WPRES WPRE Micron Technology, Inc., reserves the right to change products or specifications without notice. 83 256Mb: x4, x8, x16 DDR SDRAM T4n T5 T5n T6 T7 NOP 1 NOP 1 NOP DQSL DQSH WPST Transitioning Data ©2003 Micron Technology, Inc. All rights reserved. ...

Page 86

... NOP WRITE NOP Col Bank x t RCD t RAS t DQSS (NOM) t WPRES t WPRE 256Mb: x4, x8, x16 DDR SDRAM T4n T5 T5n NOP NOP NOP DQSL t DQSH t WPST Transitioning Data Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2003 Micron Technology, Inc. All rights reserved. ...

Page 87

... DQSH Transitioning Data t DQSS (MIN). t DQSS (MAX). Micron Technology, Inc., reserves the right to change products or specifications without notice. 85 256Mb: x4, x8, x16 DDR SDRAM Operations T2n T3 t DSS 3 t WPST Don’t Care t RP) after the t RAS (MIN), as described for t RP) is completed. ...

Page 88

... READ NOP Col Bank x t RCD, t RAP RAS RPRE t LZ (MIN (MIN) t RAS has been satisfied. Micron Technology, Inc., reserves the right to change products or specifications without notice. 86 256Mb: x4, x8, x16 DDR SDRAM T5 T5n T6 T6n NOP NOP NOP DQSCK (MIN) t RPST (MIN) ...

Page 89

... AUTO REFRESH command and the next AUTO REFRESH command is 9 × specifications exceed the JEDEC requirement by one clock. This maximum absolute interval is to allow future support for DLL updates, internal to the DDR SDRAM restricted to AUTO REFRESH cycles, without allowing excessive drift in updates. ...

Page 90

... DM, DQ, and DQS signals are all “Don’t Care”/High-Z for the operations shown. SELF REFRESH When in the self refresh mode, the DDR SDRAM retains data without external clocking. The DLL is automatically disabled upon entering SELF REFRESH and is automatically enabled upon exiting SELF REFRESH (a DLL reset and 200 clock cycles must then occur before a READ command can be issued). Input signals except CKE are “ ...

Page 91

... XSRD (200 cycles of a valid clock with CKE = HIGH) is required before any READ command can be applied general rule, any time self refresh mode is exited, the DRAM may not re-enter the self refresh mode until all rows have been refreshed via the AUTO REFRESH command at the ...

Page 92

... Power-down (CKE Not Active) Unlike SDR SDRAMs, DDR SDRAMs require CKE to be active at all times an access is in progress, from the issuing of a READ or WRITE command, until completion of the access. Thus a clock suspend is not supported. For READs, an access completion is defined when the read postamble is satisfied; for WRITEs, when the write recovery time ...

Page 93

... Valid 2 NOP Valid Enter 3 power-down mode must always be powered within the specified range. REF tive owners. Micron Technology, Inc., reserves the right to change products or specifications without notice. 91 256Mb: x4, x8, x16 DDR SDRAM Ta0 Ta1 ( ( ) ) ( ( ) ) NOP ( ( ) ) ( ( ) ) ( ( ) ) ( ...

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